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Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods
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10.1063/1.4752402
/content/aip/journal/jap/112/6/10.1063/1.4752402
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752402
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of as-grown ZnO NRs on n-SiC substrate. The inset shows the SEM image after spin coating followed by soft backing.

Image of FIG. 2.
FIG. 2.

(a) Typical room temperature current-voltage characteristics for Au/ZnO NR-based Schottky diode; and (b) log-log plot for the I-V data of Au/ZnO NR-based Schottky diode.

Image of FIG. 3.
FIG. 3.

Typical C-V characteristics of the Au/ZnO NR-based Schottky diode measured at room temperature; the inset shows the depth profile.

Image of FIG. 4.
FIG. 4.

The C-V characteristics of Au/ZnO NR-based Schottky diodes at different frequencies.

Image of FIG. 5.
FIG. 5.

The C–f characteristics of Au/ZnO NR-based Schottky diodes at zero bias. The solid line represents the exponential fitting, and the inset shows the CP-ω plot extracted from the measured data.

Image of FIG. 6.
FIG. 6.

The Gp/ω vs. ω characteristics extracted from the measured data.

Image of FIG. 7.
FIG. 7.

Energy distribution curve of the interface states calculated from Gp/ω vs. ω measurements.

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/content/aip/journal/jap/112/6/10.1063/1.4752402
2012-09-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752402
10.1063/1.4752402
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