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Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
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10.1063/1.4752429
/content/aip/journal/jap/112/6/10.1063/1.4752429
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752429
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Near-band-edge PL spectra at 300 K of (a) Ga- (+c), (b) N-polar (−c), and (c) m-plane surfaces of as-received and BHF-treated GaN substrates. The corresponding data for ZnO substrates are shown in (d)–(f). Solid and dotted lines represent PL spectra of as-received and BHF-treated substrates, respectively.

Image of FIG. 2.
FIG. 2.

(a) TRPL signals at 300 K of Ga- (+c), N-polarity (−c), and m-plane surfaces of as-received and BHF-treated GaN substrates. The signals are shifted for easy viewing. (b) τPL at 300 K as a function of IPL of as-received and BHF-treated GaN substrates. The solid line represents the linear relation.

Image of FIG. 3.
FIG. 3.

(a) TRPL signals at 300 K of Zn- (+c), O-polarity (−c), and m-plane surfaces of as-received and BHF-treated ZnO substrates. The signals are shifted for easy viewing. (b) τPL at 300 K as a function of IPL of as-received and BHF-treated ZnO substrates. The solid line represents the linear relation.

Image of FIG. 4.
FIG. 4.

Schematic diagrams of our surface recombination model at c-plane surfaces of (a) as-received and (b) BHF-treated n-type GaN substrates. (c) Schematic diagram of space charge distribution. EFn and EFp represent the quasi-Fermi levels of electrons and holes, respectively.

Image of FIG. 5.
FIG. 5.

PL spectra at 4 K of (a) Ga- (+c), (b) N-polar (−c), and (c) m-plane surfaces of as-received and BHF-treated GaN substrates. Differential PL spectra are shown in (d)–(f).

Image of FIG. 6.
FIG. 6.

TRPL signals at 4 K of Ga- (+c), N-polarity (−c), and m-plane surfaces of as-received and BHF-treated GaN substrates. The signals are shifted for easy viewing.

Image of FIG. 7.
FIG. 7.

(a) Numerically simulated energy-band diagrams and (b) electric field distribution in n-type GaN (n = 3 × 1017 cm−3) at 300 K. To qualitatively explain the PL results, energy band diagrams were simulated for as-received (bold solid line) and BHF-treated (thin solid line) GaN.

Image of FIG. 8.
FIG. 8.

Numerically simulated η survive for n-type GaN (n = 3 × 1017 cm−3) at 300 K as a function of S 0. Shaded regions correspond to S0 values expected for +c and −c surfaces.

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/content/aip/journal/jap/112/6/10.1063/1.4752429
2012-09-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752429
10.1063/1.4752429
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