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Suppressing on-chip electromagnetic crosstalk for spin qubit devices
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10.1063/1.4752863
/content/aip/journal/jap/112/6/10.1063/1.4752863
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752863
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Figures

Image of FIG. 1.
FIG. 1.

(a) Typical time-domain waveform used for control of singlet-triplet spin qubits, with corresponding frequency components. (b) Photograph of the qubit chip linked to a multilayer PCB with Al bond wires. Attenuated coaxial cables link the room temperature arbitrary waveform generator to the PCB. (c)Optical micrograph of the device (false colour) showing bond wires (black), gate interconnects (yellow), and ohmic contacts (green). The mesa structure that defines the 2DEG is shaded blue. (d) Scanning electron micrograph (false colour) of a representative device, showing EBL fine gates and the location of the two quantum dots and electron spins. Crossed boxes indicate regions connected to ohmic contacts. (e) Measured and simulated crosstalk between interconnects for gates 1 and 2 and transmission along the interconnect for gate 3. (f) Low temperature ( = 5 K) time-domain crosstalk between the interconnects for gates 1 and 2 (green) and between gate 3 and the adjacent ohmic (blue).

Image of FIG. 2.
FIG. 2.

((a), (c), (e)) Three generations of interconnect pattern and associated crosstalk performance. Devices do not feature fine EBL-defined gates. Gate interconnect metallisation is shown in yellow, ohmics contacts in green, with the 2DEG region shaded blue. ((b), (d), (f)) show crosstalk and transmission performance for each interconnect pattern. Crosstalk is measured between gate interconnects 1 and 2, with transmission evaluated along the length of gate interconnect 1.

Image of FIG. 3.
FIG. 3.

Characterization of an integrated low-crosstalk four dot device. (a) Optical photograph and (false colour) electron micrograph of the device. Contact gates and ground guards are shaded yellow, with ohmic contacts shaded green and 2DEG region in blue. (b) Comparison of the simulated electric field (E-field) induced by gate interconnect 2 on gate interconnect 1 for this device (upper panels) and the original device considered in Fig. 1(c) (lower panels). Electric fields are plotted for the slice indicated by the white line in the colour images for a signal frequency of 6 GHz. (c) Crosstalk between gate interconnects 1 and 2 and transmission performance comparing this device with the original interconnect geometry considered in Fig. 1. (d) Time-domain crosstalk between gate interconnect 1 and 2 (green) and between gate 1 and the adjacent ohmic (blue) for the device shown in (a).

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/content/aip/journal/jap/112/6/10.1063/1.4752863
2012-09-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppressing on-chip electromagnetic crosstalk for spin qubit devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/6/10.1063/1.4752863
10.1063/1.4752863
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