The simulation of an outgoing waveform being absorbed by a PML. The solid line is the real part of and the dashed line is the imaginary part. The normalization is indicated by . (a) A normalized waveform is initialized in a problem space of 300 cells. Each cell represents 0.4 nm. It is assumed that the background medium is GaAs. This waveform represents a particle of 0.05 eV moving from left to right. (b) As the waveform interacts with the 50 point PML on the right it is absorbed with no apparent reflection. (c) Eventually the waveform is fully absorbed as indicated by the normalization which has dropped to less than one percent.
Diagram of the quantum well. The background material is GaAs with an effective mass of 0.067. The shaded areas are with an effective mass of .088.
(a) A waveform is initiated at 5 nm. As it passes the 7 nm point, the time domain data are stored. (b) The part of the waveform that is transmitted through the channel is monitored at the 23 nm point. (c) When the simulation is complete, the Fourier transform of the input and output time-domain data is taken and the transmission is calculated via Eq. (7).
Calculation of the transmission via the Green's function method.
The same simulation as Fig. 3 at the time 0.52 ps showing that the waveform at about 11 nm is left oscillating in the well.
Simulation of transmission through a two identical wells. Note that the resonant peaks from Fig. 3 have split in two.
The calculation of transmission when a bias of 0.05 V has been added to the channel.
The Green's function calculation of transmission for the channel inFig. 7.
Simulation of the channel of an n-type, enhancement mode MOSFET with a bias of (a) after 0.06 ps, and (b) after 0.3 ps.
Illustration of the calculation of the conductance for the channel in Fig. 9. The lines and are the Fermi distributions on the left and right side of the channel, respectively, assuming the Fermi energy is 0.35 eV on the left side. The blackened area illustrates the integral in Eq. (10).
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