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Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film
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10.1063/1.4755795
/content/aip/journal/jap/112/7/10.1063/1.4755795
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4755795
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM image of nc-ZnO film.

Image of FIG. 2.
FIG. 2.

Temperature dependent resistivity curve of the pristine, and 130 MeV Ni and 150 MeV Ag ion irradiated nc-ZnO films irradiated with the fluence of 1 × 1012 ions/cm2. Inset shows the zoomed part of the curves.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics of the 150 MeV Ag irradiated nc-ZnO films at various temperatures is the symmetric geometry of the contacts and insets shows the contacts and zoomed part of the curve for the clarity at very low currents.

Image of FIG. 4.
FIG. 4.

UV-visible absorption spectra of the pristine and 130 MeV Ni and 150 MeV Ag ion irradiated nc-ZnO films irradiated with the fluence of 1 × 1012 ions/cm2. Inset shows the Tauc's plot of the pristine film for determining the bandgap.

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/content/aip/journal/jap/112/7/10.1063/1.4755795
2012-10-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4755795
10.1063/1.4755795
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