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Electric field assisted sputtering of Fe3O4 thin films and reduction in anti-phase boundaries
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Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of the un-assisted and electric field assisted Fe3O4 films deposited on Si(100) substrate (a) glancing angle (GA = 0.5°) and (b) θ-2θ mode.

Image of FIG. 2.
FIG. 2.

Raman spectra recorded in the range 100–800 cm−1 at room temperature for E0 and E10 films. The inset shows the Lorentzian fitted curves of the peaks due to A1g and T2g modes.

Image of FIG. 3.
FIG. 3.

(a) The experimental resistivity data (open Δ symbols) of E0 sampleshown as ln ρ vs T−1/2 plot. The coloured solid lines are the linear fits in the temperature regimes demarcated by vertical lines: 300–136 K (olive), 136–101 K (blue), 101–80 K (red). (b) The experimental resistivity data of E10 sample shown as ln ρ vs T−1/2 (open □ symbols) and ln ρ vs T−1 (open star symbols) plots. The coloured solid lines are the linear fits inthe temperature regimes: 300–127 K (wine) in ln ρ vs T−1 plot and 127–112 K (blue) and 112–80 K (red) both in ln ρ vs T−1/2.

Image of FIG. 4.
FIG. 4.

The in-plane magnetization hysteresis loops of E0 and E10 samples recorded at room temperature. The inset shows the coercivity of the samples.

Image of FIG. 5.
FIG. 5.

Temperature dependence of field cooled magnetization recorded in presence of 200 Oe applied magnetic field for E0 (open Δ symbols) and E10 (filled • symbols) samples. The inset shows the enlarged view near the Verwey transition and vertical lines indicate the start and end temperatures of the transition.


Generic image for table
Table I.

Fitting parameters for line shape of Raman peaks observed in E0 and E10 samples. Here, ω is frequency, Г is FWHM, and λ is electron-phonon coupling strength.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field assisted sputtering of Fe3O4 thin films and reduction in anti-phase boundaries