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Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy
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10.1063/1.4757031
/content/aip/journal/jap/112/7/10.1063/1.4757031
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757031
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Figures

Image of FIG. 1.
FIG. 1.

(a)–(d) FESEM images for the InN film grown at different N-fluxes 2, 4, 6, and 8 sccm, respectively, and corresponding insets show respective RHEED pattern. Here, RHEED is taken with e-beam || ⟨⟩.

Image of FIG. 2.
FIG. 2.

(a)–(d) XRD θ-2θ scans for the films grown at 2, 4, 6, and 8 sccm, respectively. In the inset, solid and dashed lines indicate, respectively, purehydrostatic and biaxial strains, and solid triangles show calculated strain values from XRD pattern. Open symbols show literature values of MBE grown films,28,29 while solid circles are for MOVPE grown InN films.10

Image of FIG. 3.
FIG. 3.

(a)–(d) Absorption (squared) plots for films grown at N-flux rates of 2, 4, 6, and 8 sccm, respectively. The inset shows theoretical Moss-Burstein shift curve along with our experimental points.

Image of FIG. 4.
FIG. 4.

Deconvoluted XPS N1s core level for the sample grown at 8 sccm. The inset shows the integral intensity ratio of defect peaks to InN peak plotted versus N-flux rate. The solid squares and circles represent ratio of integral intensity of nitrogen interstitial and antisite defect to InN peaks, respectively.

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/content/aip/journal/jap/112/7/10.1063/1.4757031
2012-10-04
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757031
10.1063/1.4757031
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