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Broadband near-infrared emission from bismuth-doped multilayer films
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10.1063/1.4757579
/content/aip/journal/jap/112/7/10.1063/1.4757579
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757579
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the sample structure. Bi-doped silica (6 nm) and spacer (3 nm) layers are alternatively deposited on fused quart substrates. The spacer layers are sputter-deposited Si, silica or Si rich silica.

Image of FIG. 2.
FIG. 2.

PL spectra of BDS/SRS, BDS/Si, and BDS/silica multilayer samples, and Bi-doped Si-rich silica single layer sample annealed at (a) 1100 and (b) 1300 °C. The dotted curves in (b) are the result of decomposition of the spectrum of the BDS/Si sample into two Gaussian functions.

Image of FIG. 3.
FIG. 3.

(a) PL decay curves of BDS/SRS multilayer and Bi-doped Si-rich silica single layer samples annealed at 1100 °C. The excitation wavelength is 488 nm and the detection wavelength is 1100 nm. (b) PL decay curves of BDS/SRS and BDS/Si multilayer samples and Bi-doped Si-rich silica single layer sample annealed at 1300 °C. The detection wavelength is 1150 nm. The decay times estimated by fitting the curves by stretched exponential functions are shown in the figure.

Image of FIG. 4.
FIG. 4.

PL peak intensity as a function of excitation wavelength for BDS/SRS multilayer and Bi-doped Si-rich silica single layersamples annealed at (a) 1100 and (b)1300 °C. The curves are drawn for the guide to the eyes.

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/content/aip/journal/jap/112/7/10.1063/1.4757579
2012-10-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Broadband near-infrared emission from bismuth-doped multilayer films
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757579
10.1063/1.4757579
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