Schematic illustration of the sample structure. Bi-doped silica (6 nm) and spacer (3 nm) layers are alternatively deposited on fused quart substrates. The spacer layers are sputter-deposited Si, silica or Si rich silica.
PL spectra of BDS/SRS, BDS/Si, and BDS/silica multilayer samples, and Bi-doped Si-rich silica single layer sample annealed at (a) 1100 and (b) 1300 °C. The dotted curves in (b) are the result of decomposition of the spectrum of the BDS/Si sample into two Gaussian functions.
(a) PL decay curves of BDS/SRS multilayer and Bi-doped Si-rich silica single layer samples annealed at 1100 °C. The excitation wavelength is 488 nm and the detection wavelength is 1100 nm. (b) PL decay curves of BDS/SRS and BDS/Si multilayer samples and Bi-doped Si-rich silica single layer sample annealed at 1300 °C. The detection wavelength is 1150 nm. The decay times estimated by fitting the curves by stretched exponential functions are shown in the figure.
PL peak intensity as a function of excitation wavelength for BDS/SRS multilayer and Bi-doped Si-rich silica single layersamples annealed at (a) 1100 and (b)1300 °C. The curves are drawn for the guide to the eyes.
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