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Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe
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10.1063/1.4757595
/content/aip/journal/jap/112/7/10.1063/1.4757595
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757595

Figures

Image of FIG. 1.
FIG. 1.

Cooldown time-temperature data: (a) Ingot C which was gradually cooled down from 1000 °C to room temperature. (b) Ingot F which was rapidly cooled (typically from below 1000 °C till about 450 °C, then cooled down gradually to room temperature).

Image of FIG. 2.
FIG. 2.

Grain structure images of as cut slices from (a) ingot B (0.5% excess Te, grown at 0.4 mm/h and 70 °C/in.), (b) ingot C (0.5% excess Te grown at 0.86 mm/h and 70 °C/in.), (c) quenched ingot D (0% excess Te, grown at 0.55 mm/h and 50 °C/in.), and (d) quenched ingot F (7.5% excess Te, grown at 0.4 mm/h and 50 °C/in.).

Image of FIG. 3.
FIG. 3.

(a) Mobility-lifetime product for electrons in detector sample C (0.5% excess Te) using a Cs-137 source with a shaping time of 1.5 μsec. (b) Response to radiation from a Co-57 gamma source with a shaping time of 0.5 μsec.

Image of FIG. 4.
FIG. 4.

(a) TSC plots for samples A (at 50 mV), B (at 50 mV), and C (at 500 mV) grown at 70 °C/in. gradient (A was quenched while B and C were not quenched during cooldown). (b) TSC plots for samples D (at 200 mV), E (at 200 mV), and F (at 150 mV) grown at 50 °C/in. gradient (all these samples were quenched during cool down).

Image of FIG. 5.
FIG. 5.

(a) Variable heating rate TSC plots (with a bias of 500 mV) on sample E. (b) Arrhenius plot corresponding to the data set from (a) from which the thermal ionization energy and capture cross-section for level Donor were extracted.

Image of FIG. 6.
FIG. 6.

(a) Variable heating rate TSC plots (with a bias of 500 mV) on sample E. (b) Arrhenius plot corresponding to the data set from (a) from which the thermal ionization energy and capture cross-section for level Ac were extracted.

Image of FIG. 7.
FIG. 7.

(a) Variable heating rate plots from sample B performed with a 50 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for level X were extracted.

Image of FIG. 8.
FIG. 8.

(a) Variable heating rate plots from sample E performed with a 500 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for the defect level TV1 were extracted.

Image of FIG. 9.
FIG. 9.

(a) Variable heating rate plots from sample C performed with a −200 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for the defect level TV2 were extracted.

Image of FIG. 10.
FIG. 10.

(a) Variable heating rate plots from sample A performed with a 50 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for level TV3 were extracted.

Image of FIG. 11.
FIG. 11.

(a) Variable heating rate plots from sample B performed with a 50 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for level T1 were extracted.

Image of FIG. 12.
FIG. 12.

(a) Variable heating rate plots from sample E performed with a 500 mV bias across the sample. (b) The corresponding Arrhenius plot for data from (a) from which the thermal ionization energy and capture cross-section for level T2 were extracted.

Tables

Generic image for table
Table I.

CdZnTe samples used in the present studies along with excess Te (by wt. %). Grown ingots A, C, and D were 69 mm in diameter (close to heel) and grown ingots B, E, and F were 85 mm in diameter (close to heel).

Generic image for table
Table II.

μτe and peak-to-valley ratio of the 122 keV Co-57 peak data for samples A through F, as well as the average μτe and peak-to-valley ratio of the 122 keV Co-57 peak data for the ingots A through F from which the respective samples were selected.

Generic image for table
Table III.

CdZnTe crystals used in the present studies and the GDMS results, in atomic ppb.

Generic image for table
Table IV.

Various trap levels found in the band gap of samples A through F presented along with their thermal ionization energy and trap cross-section. Observed: Energy and trap cross section could not be determined because of a low peak current amplitude or a weak current signal in the TSC spectrum.

Generic image for table
Table V.

Thermal ionization energy and capture cross-section of various proposed defect levels in the CdZnTe samples studied. (With a comparison to first principle calculations,12 and our published results on the band gap defect levels in CdTe.8)

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/content/aip/journal/jap/112/7/10.1063/1.4757595
2012-10-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757595
10.1063/1.4757595
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