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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
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10.1063/1.4757942
/content/aip/journal/jap/112/7/10.1063/1.4757942
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757942
/content/aip/journal/jap/112/7/10.1063/1.4757942
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/content/aip/journal/jap/112/7/10.1063/1.4757942
2012-10-10
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757942
10.1063/1.4757942
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