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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
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10.1063/1.4757942
/content/aip/journal/jap/112/7/10.1063/1.4757942
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757942
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature MCL spectra for the planar reference GaN sample 1 (solid line, black), for the nanopillar sample 2 (as-received after RIE, dashed line, red), for the nanopillar GaN sample 3 (RIE + RTA 900 °C, dashed-dotted line, green), and the nanopillar GaN sample 4 (RIE + RTA + KOH etching, dashed-dotted-dotted line, blue); all spectra taken with the probing beam accelerating voltage 7 kV and the beam current of close to 3 nA; the numbers near the curves correspond to the sample number.

Image of FIG. 2.
FIG. 2.

SEM image of the nanopillar sample 2.

Image of FIG. 3.
FIG. 3.

Room temperature I-V characteristics for the planar reference GaN sample 1 (solid line, black), for the nanopillar sample 2 (as-received after RIE, dashed line, red), for the nanopillar GaN sample 3 (RIE + RTA 900 °C, dashed-dotted line, green), and the nanopillar GaN sample 4 (RIE + RTA + KOH etching, dashed-dotted-dotted line, blue); the numbers near the curves correspond to the sample number.

Image of FIG. 4.
FIG. 4.

The temperature dependence of the dark (solid lines) forward current at forward bias of 1 V for the nanopillar sample 2 after RIE (black line) and after RTA at 600 °C and etching in aqua regia (red line); the dashed lines of corresponding colors are for measurements after illumination at 85 K with 365-nm-wavelength LED.

Image of FIG. 5.
FIG. 5.

Concentration profile calculated from 85 K 1 kHz C-V measurements on the nanopillar sample 2 after etching in aqua regia.

Image of FIG. 6.
FIG. 6.

Admittance spectra measured on the nanopillar sample 2 after etching in aqua regia; capacitance C and AC conductance G divided by circular frequency ω shown for three measurement frequencies f = 0.3 kHz (dashed-dotted-dotted line, blue), 2 kHz (dashed-dotted line, green), and 5 kHz (dashed line, red) (ω = 2πf).

Image of FIG. 7.
FIG. 7.

DLTS spectra measured on various nanopillar samples; the samples numbers are shown near each spectrum; the measurements were performed at reverse bias of −1 V, forward bias pulse of 1 V (2-s-long); the spectra are shown for time windows 100 ms/1000 ms.

Image of FIG. 8.
FIG. 8.

MCL spectra measured on nanopillar sample 2 after annealing at 600 °C and etching in aqua regia; also shown are the spectra for the reference sample 1, and nanopillar samples 3, 4 after additional etching in aqua regia.

Image of FIG. 9.
FIG. 9.

Room temperature I-V characteristics of nanopillar samples after additional etching in aqua regia (the sample's number is shown near each curve).

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/content/aip/journal/jap/112/7/10.1063/1.4757942
2012-10-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4757942
10.1063/1.4757942
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