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Thermoelectric properties of highly doped n-type polysilicon inverse opals
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10.1063/1.4758382
/content/aip/journal/jap/112/7/10.1063/1.4758382
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4758382
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic of an inverse opal unit cell.

Image of FIG. 2.
FIG. 2.

Scattering rates of electrons for different processes in silicon at 300 K. Solid lines represent scattering mechanisms insensitive to doping. Dashed and dotted-dashed lines represent doping levels of and , respectively. The shell thickness and average grain size are both 25 nm.

Image of FIG. 3.
FIG. 3.

Thermal conductivity as a function of doping concentration at 300 K. The open circles, triangles, and squares are measurement values from Refs. 38, 60, and 61. The red, green, and blue curves are calculations for P-doped 3m thick, As-doped 174 nm thick, and As-doped 74 nm thick single-crystal silicon films, respectively.

Image of FIG. 4.
FIG. 4.

Electron mobility in bulk and thin-film single-crystal silicon, bulk polysilicon, and polysilicon inverse opals at 300 K. The shell thickness and grain size are both 25 nm. The data for bulk silicon are from Ref. 62 (open circles) and Ref. 63 (crosses).

Image of FIG. 5.
FIG. 5.

The calculated effective thermal conductivity of polysilicon inverse opals as a function of shell thickness. We assume the average grain size to be equal to the shell thickness in these calculations.

Image of FIG. 6.
FIG. 6.

The Seebeck coefficient at 300 K as a function of doping. The solid lines represent phonon-drag, carrier diffusion, and total Seebeck coefficients, respectively, in single-crystal bulk silicon. The dashed line is the Seebeck coefficient in polysilicon inverse opals. The open circles are data from Ref.45.

Image of FIG. 7.
FIG. 7.

The power factor for different silicon structures at 300 K as a function of doping.

Image of FIG. 8.
FIG. 8.

The ratio between the electrical and thermal conductivities in relation to the ratio for bulk silicon. The doping level is and the temperature is 300 K for all curves. Grain boundaries contribute more to the enhancement than surfaces as evident from the curves for thin film and polycrystalline silicon with similar feature size. Inverse opals combine both effects and are slightly better than bulk polysilicon when the grain size equals the shell thickness.

Image of FIG. 9.
FIG. 9.

The mean free path of electrons and phonons due to grain boundary scattering as a function of energy. The grain size is 25 nm. Mean free paths for electrons are consistently larger than those for phonons. The Casimir limit is shown for comparison with boundary scattering. The discontinuity in the phonon curves arises from the segmented dispersion assumed in Holland's model.35

Image of FIG. 10.
FIG. 10.

The projected ZT as a function of shell thickness. The solid curves represent different ratios, r, of the average grain size to the shell thickness. Choosing grain sizes smaller than the shell thickness enhances the figure of merit for feature sizes 10 nm.

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/content/aip/journal/jap/112/7/10.1063/1.4758382
2012-10-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermoelectric properties of highly doped n-type polysilicon inverse opals
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/7/10.1063/1.4758382
10.1063/1.4758382
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