(a) Planar nanowire loop with a hexagonal wall generator and a bar-shaped wall stopper, as patterned from a magnetic thin film on nonmagnetic substrate, under in-plane rotating magnetic field H ex. (b) The relaxed magnetic domain structure upon removal of a saturating magnetic field (white dashed arrow). Small white arrows and color contours within the nanowire represent magnetization direction. A and J label the wall generator and stopper, respectively, and B-I label the eight bending corners of the nanowire in the order from the wall generator to the wall stopper.
Simulated magnetic domain structure evolution and domain wall generation for the first two loading cycles of counterclockwise rotating magnetic field at (a) t* = 0.25, (b) t* = 0.5, (c) t* = 0.75, (d) t* = 1, (e) t* = 1.25, (f) t* = 1.5, (g) t* = 1.75, and (h) t* = 2.0. The white solid arrow indicates the elliptical rotating field direction. Small white arrows and color contours within the nanowire represent magnetization direction. N indicates the number of 360° domain walls stored in the nanowire.
Simulated generation and storage of multiple 360° domain walls under multiple cycles of counterclockwise rotating magnetic field at (a) t* = 5, (b) t* = 10, and (c) t* = 59.75.
Simulated annihilation of 360° domain walls under clockwise rotating magnetic field at (a) t* = 1.25, (b) t* = 5.25, and (c) t* = 9.25.
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