The quantum spin polarized state filter. (1) Ferrite needle; (2) 10 coils of 0.3 mm diameter Cu wire; (3) substrate with deposited ferromagnetic, dielectric, and conductive nanolayers; (4) ferrite core; (5) 10 coils of 0.3 mm diameter Cu wire; (b) current generator. “In” signal is produced by a Data Acquisition PCI Card programmed via labview software; +U is connected to the power supply (6269B, AD Power Supply, Hewlett Packard); R1 and R2 are the resistors, T1 and T2 are the transistors; (c) output waveform for control samples containing one layer only, of either Fe, SiO2 or Au; (d) output waveform for control sample containing one layer of Fe in a modified device.
TEM micrograph of the cross-cut five-layer device; layers, top to bottom: Si substrate, Fe (ferromagnetic material 1, 7.3 nm), SiO2 (dielectric material 1, 11.2 nm), Au (conductive material, 7.6 nm), SiO2 (dielectric material 2, 8.1 nm), and Fe (ferromagnetic material 2, 7.1 nm).
Output waveform in function of the needle tip diameter: (1) 0.05 mm; (2) 0.06 mm; (3) 0.07 mm; (4) 0.08 mm; (5) 0.09 mm; (6) 0.10 mm; (7) 0.50 mm; (8) 1.00 mm; (9) 2.00 mm; (10) 3.00 mm. Three-layer device, layers: Fe—7.7 nm, SiO2—11.4 nm, and Au—9.8 nm.
Dependence of the resonance width (MS = 3) on the needle tip diameter for the same three-layer device as in Fig. 3.
Output waveform in function of the Au layer thickness: (1) 10.3 nm; (2) 11.8 nm; (3) 12.7 nm; (4) 13.7 nm; (5) 15.1 nm; (6) 16.3 nm; (7) 16.9 nm; (8) 17.7 nm; (9) 18.5 nm; (10) 19.8 nm. Other parameters of the three-layer device: Fe—7.7 nm, SiO2—11.4 nm, and d = 0.05 mm.
Dependence of the resonance width (MS = 3) on thickness of the Au layer, for the same three-layer device as in Fig. 5.
Output waveform in function of the SiO2 layer thickness: (1) 12.1 nm; (2) 13.3 nm; (3) 13.9 nm; (4) 14.7 nm; (5) 15.3 nm; (6) 16.1 nm; (7) 16.9 nm; (8) 17.4 nm; (9) 18.1 nm; (10) 19.2 nm. Three-layer device: Fe—7.7 nm, Au—9.8 nm and d = 0.05 mm.
Dependence of the (a) output signal integrated intensity and (b) width of the resonance peak (MS = 3) on thickness of the SiO2 layer for the same three-layer device as in Fig. 7.
Output waveform for a five-layer device: (a) the entire time sweep; (b) the initial time section. Device dimensions: Fe—7.3 nm; SiO2 —11.2 nm; Au—7.6 nm; SiO2 —8.1 nm; Fe—7.1 nm.
State interaction diagram for the three-state model.
Experimental output waveform compared to the simulated theoretical signal.
Output waveforms in three-layer (the same as in Fig. 3) and five-layer (the same as in Fig. 9) devices at 4.7 K; d = 0.05 mm.
Geometric parameters of the spin state filter devices: d—the needle tip diameter; h F—thickness of the ferromagnetic layer, h D—thickness of the dielectric layer, h C—thickness of the conductive layer.
Values of the simulation parameters.
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