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An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
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10.1063/1.4759139
/content/aip/journal/jap/112/8/10.1063/1.4759139
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/8/10.1063/1.4759139
/content/aip/journal/jap/112/8/10.1063/1.4759139
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/content/aip/journal/jap/112/8/10.1063/1.4759139
2012-10-17
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/8/10.1063/1.4759139
10.1063/1.4759139
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