Geometry of the circular cross-section SGT. is the semiconductor radius and the insulator thickness.
Potential energy profile along a radial slice of the SGT system in a finite potential well: ; where and correspond to the potential energy and effective mass in the semiconductor (insulator), respectively.
Energy minimum of the first subbands of InGaAs nanowires as a function of the device size at (a) and (b) . Comparison between simulation results (symbols), and model results (lines) considering a finite (solid) and infinite (dashed) potential well. The first L valley energy level (not modeled) is also depicted.
Iterative scheme for the resolution of Eq. (25).
Energy minimum of the first subbands of InGaAs nanowires at . Comparison between simulation (symbols) and modeled (lines) values before (dashed) and after (solid) the energy correction.
Potential along a slice of semiconductor for InAs (left) and InGaAs (right) nanowires at and . Solid lines have been used for the simulation, while dashed lines represent the results of the model.
Electron density along a slice of semiconductor for InAs (left) and InGaAs (right) nanowires at and . Comparison between simulation (solid) and model (dashed) results. The contribution of the first energy level is plotted in dotted line.
Comparison between the simulated (dashed) and modeled (solid) inversion charge for (a) InGaAs and (b) InAs nanowires with different sizes.
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