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Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
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10.1063/1.4759275
/content/aip/journal/jap/112/8/10.1063/1.4759275
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/8/10.1063/1.4759275
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Geometry of the circular cross-section SGT. is the semiconductor radius and the insulator thickness.

Image of FIG. 2.
FIG. 2.

Potential energy profile along a radial slice of the SGT system in a finite potential well: ; where and correspond to the potential energy and effective mass in the semiconductor (insulator), respectively.

Image of FIG. 3.
FIG. 3.

Energy minimum of the first subbands of InGaAs nanowires as a function of the device size at (a) and (b) . Comparison between simulation results (symbols), and model results (lines) considering a finite (solid) and infinite (dashed) potential well. The first L valley energy level (not modeled) is also depicted.

Image of FIG. 4.
FIG. 4.

Iterative scheme for the resolution of Eq. (25).

Image of FIG. 5.
FIG. 5.

Energy minimum of the first subbands of InGaAs nanowires at . Comparison between simulation (symbols) and modeled (lines) values before (dashed) and after (solid) the energy correction.

Image of FIG. 6.
FIG. 6.

Potential along a slice of semiconductor for InAs (left) and InGaAs (right) nanowires at and . Solid lines have been used for the simulation, while dashed lines represent the results of the model.

Image of FIG. 7.
FIG. 7.

Electron density along a slice of semiconductor for InAs (left) and InGaAs (right) nanowires at and . Comparison between simulation (solid) and model (dashed) results. The contribution of the first energy level is plotted in dotted line.

Image of FIG. 8.
FIG. 8.

Comparison between the simulated (dashed) and modeled (solid) inversion charge for (a) InGaAs and (b) InAs nanowires with different sizes.

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/content/aip/journal/jap/112/8/10.1063/1.4759275
2012-10-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/8/10.1063/1.4759275
10.1063/1.4759275
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