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Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN
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Image of FIG. 1.
FIG. 1.

Panels (a), (b), (c), and (d) show FESEM images for samples A, B, C, and D, respectively. Insets show corresponding in-situ RHEED pattern taken with e-beam‖〈110〉.

Image of FIG. 2.
FIG. 2.

Panels (a), (b), (c), and (d) show absorption spectra at RT for samples A, B, C and D respectively. Inset shows the photoluminescence spectra of sample D.

Image of FIG. 3.
FIG. 3.

Panels (a), (b), (c), and (d) show XPS core-level spectra of In 3 d peak for sample A, B, C, and D, respectively. Panel (e) shows an example of an In 3 d peak of an intentionally oxidized sample having oxynitride related contribution, for comparison.

Image of FIG. 4.
FIG. 4.

Panels (a), (b), (c), and (d) show XRD pattern for samples A, B, C, and D, respectively. Inset shows the zoomed view of the XRD pattern for the sample D in the 2θ range of 30° to 36°.

Image of FIG. 5.
FIG. 5.

Different reported experimental band gaps for InN from literature6,7,16 and present experiments, along with Moss-Burstein shift calculations: (a) Tansely Foley empirical data, (b) assuming parabolic conduction band (c) empirical exponential function and (d) assuming non parabolic conduction band. Data markers having star symbols are from the present experiments.


Generic image for table
Table I.

Different experimentally measured parameters: resistivity, carrier density, hall mobility, XPS % composition ratio, AFM roughness, FWHM of XRD 0002 peaks for samples A, B, C, and D.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN