Panels (a), (b), (c), and (d) show FESEM images for samples A, B, C, and D, respectively. Insets show corresponding in-situ RHEED pattern taken with e-beam‖〈110〉.
Panels (a), (b), (c), and (d) show absorption spectra at RT for samples A, B, C and D respectively. Inset shows the photoluminescence spectra of sample D.
Panels (a), (b), (c), and (d) show XPS core-level spectra of In 3 d peak for sample A, B, C, and D, respectively. Panel (e) shows an example of an In 3 d peak of an intentionally oxidized sample having oxynitride related contribution, for comparison.
Panels (a), (b), (c), and (d) show XRD pattern for samples A, B, C, and D, respectively. Inset shows the zoomed view of the XRD pattern for the sample D in the 2θ range of 30° to 36°.
Different reported experimental band gaps for InN from literature6,7,16 and present experiments, along with Moss-Burstein shift calculations: (a) Tansely Foley empirical data, (b) assuming parabolic conduction band (c) empirical exponential function and (d) assuming non parabolic conduction band. Data markers having star symbols are from the present experiments.
Different experimentally measured parameters: resistivity, carrier density, hall mobility, XPS % composition ratio, AFM roughness, FWHM of XRD 0002 peaks for samples A, B, C, and D.
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