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Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures
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10.1063/1.4758472
/content/aip/journal/jap/112/9/10.1063/1.4758472
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4758472

Figures

Image of FIG. 1.
FIG. 1.

Schematic layer structure of the superlattice samples indicating the InP QW, GaAs barrier layer, and the superlattice period. are the thicknesses of the QW and barrier layer and N is the superlattice period.

Image of FIG. 2.
FIG. 2.

PR and ER spectra for highly strained superlattice samples (a) S1 and (b) S2. Open circles are Aspnes's line shape fitting of the superlattice feature.

Image of FIG. 3.
FIG. 3.

PR and ER spectra for partially relaxed superlattice samples (a) S3, (b) S4, and (c) S5. Open symbols are the Aspnes's line shape fitting. Both the graphs are enlarged along y-axis for clarity in viewing the superlattice features.

Image of FIG. 4.
FIG. 4.

SPS spectra for highly strained superlattice structures S1 and S2.

Image of FIG. 5.
FIG. 5.

SPS spectra for partially relaxed superlattice structures S3, S4, and S5. For comparison purpose, SPS spectrum of sample S2 is also plotted in the same graph.

Tables

Generic image for table
Table I.

InP QW thicknesses, GaAs barrier layer thickness, superlattice period N, and relaxation as determined from high resolution x-ray diffraction measurements. Transition energies of the superlattice feature as determined from room temperature PR and ER measurements.

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/content/aip/journal/jap/112/9/10.1063/1.4758472
2012-11-06
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4758472
10.1063/1.4758472
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