I-V characteristic of a C-doped GaAs NWs (IV/III = 0.15, d = 490 nm) grown at a V/III ratio of 11.0. The inset shows an SEM image of a nanoprobe contacting the Au tip of a C-doped GaAs NW.
J-V characteristics of C-doped GaAs NWs (IV/III = 0.15, V/III = 11.0) with d of 170 nm and 490 nm in semi-log scale (a) and log-log scale (b). The inset in (b) shows the I-VNW characteristic of the NW with d of 490 nm where VNW was obtained after subtracting the voltage drop at the Au NP/NW interface from the applied voltage.
Semi-log I-V characteristics of C-doped GaAs NWs (IV/III = 0.15, length of 1 μm) as a function of V/III ratio. The inset represents the linear I-V curve of the C-doped GaAs NW grown with a V/III = 1.1 ratio.
Plot of (a) the calculated barrier height and ideality factor, (b) the apparent resistivity, and (c) axial growth rate of C-doped GaAs NWs (IV/III ratio = 0.15) as a function of V/III ratio. Diameters of the NWs were 200 ± 10 nm except that the NWs grown at a V/III ratio of 11.0 were d = 380 ± 20 nm.
Plot of the apparent resistivity as a function of diameter of the C-doped GaAs NWs (IV/III = 0.15). The inset shows the resistivity and estimated hole concentration as a function of V/III (the lines in the inset are guide to the eyes).
Plot of the apparent resistivity of C-doped GaAs NWs (d = 200 ± 10 nm) as a function of IV/III ratio (constant group III precursor supply).
I-V characteristics and SEM image of a fabricated FET (V/III = 3.3) at gate voltage of 0–10 V.
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