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p-type doping of GaAs nanowires using carbon
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10.1063/1.4759368
/content/aip/journal/jap/112/9/10.1063/1.4759368
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4759368
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V characteristic of a C-doped GaAs NWs (IV/III = 0.15, d = 490 nm) grown at a V/III ratio of 11.0. The inset shows an SEM image of a nanoprobe contacting the Au tip of a C-doped GaAs NW.

Image of FIG. 2.
FIG. 2.

J-V characteristics of C-doped GaAs NWs (IV/III = 0.15, V/III = 11.0) with d of 170 nm and 490 nm in semi-log scale (a) and log-log scale (b). The inset in (b) shows the I-VNW characteristic of the NW with d of 490 nm where VNW was obtained after subtracting the voltage drop at the Au NP/NW interface from the applied voltage.

Image of FIG. 3.
FIG. 3.

Semi-log I-V characteristics of C-doped GaAs NWs (IV/III = 0.15, length of 1 μm) as a function of V/III ratio. The inset represents the linear I-V curve of the C-doped GaAs NW grown with a V/III = 1.1 ratio.

Image of FIG. 4.
FIG. 4.

Plot of (a) the calculated barrier height and ideality factor, (b) the apparent resistivity, and (c) axial growth rate of C-doped GaAs NWs (IV/III ratio = 0.15) as a function of V/III ratio. Diameters of the NWs were 200 ± 10 nm except that the NWs grown at a V/III ratio of 11.0 were d = 380 ± 20 nm.

Image of FIG. 5.
FIG. 5.

Plot of the apparent resistivity as a function of diameter of the C-doped GaAs NWs (IV/III = 0.15). The inset shows the resistivity and estimated hole concentration as a function of V/III (the lines in the inset are guide to the eyes).

Image of FIG. 6.
FIG. 6.

Plot of the apparent resistivity of C-doped GaAs NWs (d = 200 ± 10 nm) as a function of IV/III ratio (constant group III precursor supply).

Image of FIG. 7.
FIG. 7.

I-V characteristics and SEM image of a fabricated FET (V/III = 3.3) at gate voltage of 0–10 V.

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/content/aip/journal/jap/112/9/10.1063/1.4759368
2012-11-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type doping of GaAs nanowires using carbon
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4759368
10.1063/1.4759368
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