PARXPS core level spectra of TiTaO deposited on multilayered substrate TiN/Ti/SiO2/Si: (a) O 1s, (b) Ti 2p, and (c) Ta 4f.
WAXRD pattern of: (a) the substrate TiN/Ti/SiO2/Si and (b) the structure TiTaO/TiN/Ti/SiO2/Si at 0.7°.
SEM images of: (a) cross section of complete structure TiTaO/TiN/Ti/SiO2/Si, (b) top view of TiTaO thin film.
Frequency dependence of: (a) dielectric constant and (b) dissipation factor tan(δ) at different temperatures for TiTaO thin films.
Diagram of Arrhenius for: (a) first relaxation f 1max and (b) second relaxation f 2max.
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