1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
Rent:
Rent this article for
USD
10.1063/1.4761980
/content/aip/journal/jap/112/9/10.1063/1.4761980
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4761980
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PARXPS core level spectra of TiTaO deposited on multilayered substrate TiN/Ti/SiO2/Si: (a) O 1s, (b) Ti 2p, and (c) Ta 4f.

Image of FIG. 2.
FIG. 2.

WAXRD pattern of: (a) the substrate TiN/Ti/SiO2/Si and (b) the structure TiTaO/TiN/Ti/SiO2/Si at 0.7°.

Image of FIG. 3.
FIG. 3.

SEM images of: (a) cross section of complete structure TiTaO/TiN/Ti/SiO2/Si, (b) top view of TiTaO thin film.

Image of FIG. 4.
FIG. 4.

Frequency dependence of: (a) dielectric constant and (b) dissipation factor tan(δ) at different temperatures for TiTaO thin films.

Image of FIG. 5.
FIG. 5.

Diagram of Arrhenius for: (a) first relaxation f 1max and (b) second relaxation f 2max.

Loading

Article metrics loading...

/content/aip/journal/jap/112/9/10.1063/1.4761980
2012-11-02
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4761980
10.1063/1.4761980
SEARCH_EXPAND_ITEM