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Optical approaches to improve the photocurrent generation in Cu(In,Ga)Se2 solar cells with absorber thicknesses down to 0.5 μm
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Image of FIG. 1.
FIG. 1.

Schematic set-up of CIGSe solar cell.

Image of FIG. 2.
FIG. 2.

Calculated spectral absorption of different layers of thick CIGSe solar cell (2∼2.5 μm thickness). (a) Same configuration as sample (a) in Table I with thick CIGSe. Total absorption in CIGSe layer is A = 69%, derived from Eq. (3). (b) As sample (c) in Table I; A = 76%. (c) As sample (e) in Table I without ARC; A = 78%. (d) Sample (e) in Table I; A = 83%.

Image of FIG. 3.
FIG. 3.

As Fig. 2 with CIGSe thickness of 0.5 μm. (a) Sample (a) in Table I; A = 57%. (b) Sample (c) in Table I; A = 63%. (c) Sample (e) in Table I without ARC; A = 71%. (d) Sample (e) in Table I; A = 76%.

Image of FIG. 4.
FIG. 4.

(a) Calculated and (b) measured absorption by a solar cell with 0.5 μm CIGSe thickness. Solid and dash lines denote absorption by textured and flat ZnO:Al front contact, respectively.

Image of FIG. 5.
FIG. 5.

EQE (dots) and calculated absorption (lines) in 0.5 μm thick CIGSe layer. Comparison between flat and textured (etch) ZnO:Al interface.

Image of FIG. 6.
FIG. 6.

Comparison of experimental EQE of 0.5 μm and 2.5 μm CIGSe based solar cells with (a) antireflection layer and (b) ZnO:Al textured layer. Dash lines present the gain with ARC or textured ZnO:Al.

Image of FIG. 7.
FIG. 7.

Short circuit current versus CIGSe thickness normalized by the reference cell [sample (a) with CIGSe thickness of 2.5 μm]. Experiments deduced from J-V measurements under AM1.5 illumination for solar cells before (filled circles) and after (open circles) ARC. Calculations derived from Eq. (4) are given by lines.

Image of FIG. 8.
FIG. 8.

As Fig. 7 when replacing the buffer layer from CdS to ZnS.

Image of FIG. 9.
FIG. 9.

As Fig. 7 when replacing the back contact from Mo to Au. In addition, the solar cell with gold back contact includes glass superstrate.


Generic image for table
Table I.

Summary of CIGSe based solar cell configurations with corresponding short circuit current with absorber thicknesses of 2 μm and 0.5 μm [0.4 μm in sample (d)].


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical approaches to improve the photocurrent generation in Cu(In,Ga)Se2 solar cells with absorber thicknesses down to 0.5 μm