Schematic set-up of CIGSe solar cell.
Calculated spectral absorption of different layers of thick CIGSe solar cell (2∼2.5 μm thickness). (a) Same configuration as sample (a) in Table I with thick CIGSe. Total absorption in CIGSe layer is A = 69%, derived from Eq. (3). (b) As sample (c) in Table I; A = 76%. (c) As sample (e) in Table I without ARC; A = 78%. (d) Sample (e) in Table I; A = 83%.
As Fig. 2 with CIGSe thickness of 0.5 μm. (a) Sample (a) in Table I; A = 57%. (b) Sample (c) in Table I; A = 63%. (c) Sample (e) in Table I without ARC; A = 71%. (d) Sample (e) in Table I; A = 76%.
(a) Calculated and (b) measured absorption by a solar cell with 0.5 μm CIGSe thickness. Solid and dash lines denote absorption by textured and flat ZnO:Al front contact, respectively.
EQE (dots) and calculated absorption (lines) in 0.5 μm thick CIGSe layer. Comparison between flat and textured (etch) ZnO:Al interface.
Comparison of experimental EQE of 0.5 μm and 2.5 μm CIGSe based solar cells with (a) antireflection layer and (b) ZnO:Al textured layer. Dash lines present the gain with ARC or textured ZnO:Al.
Short circuit current versus CIGSe thickness normalized by the reference cell [sample (a) with CIGSe thickness of 2.5 μm]. Experiments deduced from J-V measurements under AM1.5 illumination for solar cells before (filled circles) and after (open circles) ARC. Calculations derived from Eq. (4) are given by lines.
As Fig. 7 when replacing the buffer layer from CdS to ZnS.
As Fig. 7 when replacing the back contact from Mo to Au. In addition, the solar cell with gold back contact includes glass superstrate.
Summary of CIGSe based solar cell configurations with corresponding short circuit current with absorber thicknesses of 2 μm and 0.5 μm [0.4 μm in sample (d)].
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