Coupling schemes for the THG. (a) (1s-1p, 1p-2s, 2s-2p, 2p-1s); (b)(1s-1p, 1p-1d, 1d-2p, 2p-1s).
The variation of transition energy as a function of dot radius.
The variation of dipole transition matrix product D1 and D2 as a function of dot radius.
The variation of THG coefficient of Si-SiO2 as a function of the incident photon energy at different values of dot radii R = 24 Å and 27 Å, and 30 Å.
The variation of THG coefficient as a function of the incident photon energy in different surrounding matrices at dot radius R = 33 Å.
The transition matrix product of spherical Si dot.
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