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Third harmonic generation in intraband transitions of spherical silicon quantum dots
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10.1063/1.4763477
/content/aip/journal/jap/112/9/10.1063/1.4763477
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4763477

Figures

Image of FIG. 1.
FIG. 1.

Coupling schemes for the THG. (a) (1s-1p, 1p-2s, 2s-2p, 2p-1s); (b)(1s-1p, 1p-1d, 1d-2p, 2p-1s).

Image of FIG. 2.
FIG. 2.

The variation of transition energy as a function of dot radius.

Image of FIG. 3.
FIG. 3.

The variation of dipole transition matrix product D1 and D2 as a function of dot radius.

Image of FIG. 4.
FIG. 4.

The variation of THG coefficient of Si-SiO2 as a function of the incident photon energy at different values of dot radii R = 24 Å and 27 Å, and 30 Å.

Image of FIG. 5.
FIG. 5.

The variation of THG coefficient as a function of the incident photon energy in different surrounding matrices at dot radius R = 33 Å.

Tables

Generic image for table
Table I.

The transition matrix product of spherical Si dot.

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/content/aip/journal/jap/112/9/10.1063/1.4763477
2012-11-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Third harmonic generation in intraband transitions of spherical silicon quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4763477
10.1063/1.4763477
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