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The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
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10.1063/1.4764045
/content/aip/journal/jap/112/9/10.1063/1.4764045
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4764045
/content/aip/journal/jap/112/9/10.1063/1.4764045
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/content/aip/journal/jap/112/9/10.1063/1.4764045
2012-11-06
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4764045
10.1063/1.4764045
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