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Optical and structural properties of SiO x films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature
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10.1063/1.4764893
/content/aip/journal/jap/112/9/10.1063/1.4764893
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4764893

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of an as-prepared SiO1.75 film and films annealed at 1000 °C and 1200 °C, fitted by two Gaussian functions. The spectra are vertically shifted for better presentation. The Raman spectra were measured with a laser intensity of ∼103 W cm−2 at the sample.

Image of FIG. 2.
FIG. 2.

(a) Normalized PL spectra of SiO x films annealed at 1100 °C. The hole in the spectra around 970 nm is due to the second order of the notch filter. (b) Normalized PL intensity for SiO x films as a function of the annealing temperature. The PL spectra were measured with a laser intensity of ∼103 W cm−2 at the sample.

Image of FIG. 3.
FIG. 3.

Relative amounts of Si atoms bonded as in SiO2 (triangles), SiO (circles), and elemental Si (squares) as functions of (a) x for annealing at 1100 °C and (b) the annealing temperature for x ∼ 1.7.

Image of FIG. 4.
FIG. 4.

Absorption coefficient at 488 nm for annealing at 1000 °C (triangles), 1100 °C (squares), 1150 °C (diamonds), and 1200 °C (circles) as functions of (a) x and (b) the amount of elemental Si. The insert shows the dependence on the annealing temperature for x ∼ 1.75. The dashed lines are guides for the eye.

Image of FIG. 5.
FIG. 5.

(a) Normalized PL intensity and (b) relative PL quantum yield as a function of the absorption coefficient at 488 nm. The insert shows the relative PL quantum yield as a function of the amount of elemental Si for annealing at 1100 °C. The symbols are the same as in Fig. 4 .

Image of FIG. 6.
FIG. 6.

(a) Band gap for annealing at 1100 °C and (b) TE refractive index for annealing at 1000–1200 °C as a function of x. The solid symbols are the same as in Fig. 4 . The open squares are the values obtained using the effective medium approximation and the XPS results for annealing at 1100 °C. The dashed line is guide for the eye.

Image of FIG. 7.
FIG. 7.

(a) Raman shift as a function of the laser-induced temperature and (b) laser-induced temperature as a function of the laser power absorbed by a unit volume for SiO1.3 annealed at 1100 °C at various 488 nm laser powers (solid circles) and for SiO x (1.3 < x < 1.5) at the maximum laser power (open circles). The data for a free-standing SiO1.7 film from Ref. 28 (triangles) and for crystalline Si from Ref. 21 (solid line) are shown for comparison. The dotted line is a linear fit.

Tables

Generic image for table
Table I.

Experimental refractive indexes n and absorption coefficients α of SiO1.75 for different annealing temperatures T ann and the estimates for the refractive indexes and extinction coefficients from the effective medium approximation.

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/content/aip/journal/jap/112/9/10.1063/1.4764893
2012-11-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/112/9/10.1063/1.4764893
10.1063/1.4764893
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