Raman spectra of an as-prepared SiO1.75 film and films annealed at 1000 °C and 1200 °C, fitted by two Gaussian functions. The spectra are vertically shifted for better presentation. The Raman spectra were measured with a laser intensity of ∼103 W cm−2 at the sample.
(a) Normalized PL spectra of SiO x films annealed at 1100 °C. The hole in the spectra around 970 nm is due to the second order of the notch filter. (b) Normalized PL intensity for SiO x films as a function of the annealing temperature. The PL spectra were measured with a laser intensity of ∼103 W cm−2 at the sample.
Relative amounts of Si atoms bonded as in SiO2 (triangles), SiO (circles), and elemental Si (squares) as functions of (a) x for annealing at 1100 °C and (b) the annealing temperature for x ∼ 1.7.
Absorption coefficient at 488 nm for annealing at 1000 °C (triangles), 1100 °C (squares), 1150 °C (diamonds), and 1200 °C (circles) as functions of (a) x and (b) the amount of elemental Si. The insert shows the dependence on the annealing temperature for x ∼ 1.75. The dashed lines are guides for the eye.
(a) Normalized PL intensity and (b) relative PL quantum yield as a function of the absorption coefficient at 488 nm. The insert shows the relative PL quantum yield as a function of the amount of elemental Si for annealing at 1100 °C. The symbols are the same as in Fig. 4 .
(a) Band gap for annealing at 1100 °C and (b) TE refractive index for annealing at 1000–1200 °C as a function of x. The solid symbols are the same as in Fig. 4 . The open squares are the values obtained using the effective medium approximation and the XPS results for annealing at 1100 °C. The dashed line is guide for the eye.
(a) Raman shift as a function of the laser-induced temperature and (b) laser-induced temperature as a function of the laser power absorbed by a unit volume for SiO1.3 annealed at 1100 °C at various 488 nm laser powers (solid circles) and for SiO x (1.3 < x < 1.5) at the maximum laser power (open circles). The data for a free-standing SiO1.7 film from Ref. 28 (triangles) and for crystalline Si from Ref. 21 (solid line) are shown for comparison. The dotted line is a linear fit.
Experimental refractive indexes n and absorption coefficients α of SiO1.75 for different annealing temperatures T ann and the estimates for the refractive indexes and extinction coefficients from the effective medium approximation.
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