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Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment
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10.1063/1.4772996
/content/aip/journal/jap/113/1/10.1063/1.4772996
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/1/10.1063/1.4772996
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ion beam apparatus composed of (1) a substrate holder that can be replaced by a QCM and Faraday cup, (2) ECR ion beam source, and (3), (4) windows for infrared light.

Image of FIG. 2.
FIG. 2.

Chemical structure of the ArF photoresist.

Image of FIG. 3.
FIG. 3.

(a) Removed mass and (b) SY of ArF photoresist for 400 eV Ar+ as a function of the ion dose.

Image of FIG. 4.
FIG. 4.

Dependence of CO (a) IR absorption spectra and (b) peak height variations on the ion dose.

Image of FIG. 5.
FIG. 5.

Comparison of IR peak intensity variations of CO during exposure to VUV alone and to both VUV and ions.

Image of FIG. 6.
FIG. 6.

Dependence of CO (a) IR absorption spectra and (b) peak height variations on the ion dose.

Image of FIG. 7.
FIG. 7.

Dependence of C-Hx (a) IR absorption spectra and (b) peak height variations on the ion dose.

Image of FIG. 8.
FIG. 8.

Proposed mechanism for Ar plasma sputtering of the photoresist: (a) before the process, (b) component of increasing SY during phase I, (c) component of decreasing SY during phase II, (d) during phase III.

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/content/aip/journal/jap/113/1/10.1063/1.4772996
2013-01-04
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/1/10.1063/1.4772996
10.1063/1.4772996
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