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Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact
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10.1063/1.4773072
/content/aip/journal/jap/113/1/10.1063/1.4773072
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/1/10.1063/1.4773072
/content/aip/journal/jap/113/1/10.1063/1.4773072
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/content/aip/journal/jap/113/1/10.1063/1.4773072
2013-01-07
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/1/10.1063/1.4773072
10.1063/1.4773072
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