Experimental setup for the synthesis CrSi2 nanowires using CVD.
Representative SEM image of CrSi2 nanowires found on silicon substrates. The inset shows a CrSi2 microstructure.
A HRTEM image of a CrSi2 NW. The inset is the SAED pattern.
(a) TEM image of CrSi2 nanowire. (b)–(d) Si, Cr, and O EDS maps, respectively. (e) EDS spectrum of the nanowire.
The XRD pattern of the CrSi2 nanowires.
The measured field emission current density of CrSi2 nanowires as a function of the macroscopic electric field. The electric field required to obtain a maximum current density of 1.86 mA/cm2 is 3.6 V/μm. EC is 2.8 V/μm. Inset: The Fowler–Nordheim plot of the field emission current density of CrSi2 nanowires.
(a) Voltage vs current curve of the CrSi2 nanowire at room temperature, (b) the electrical conductivity as a function of temperature for a single CrSi2 nanowire (the continuous line is a guide to the eye).
Characterization of the nanowires annealed at 900 °C, 1000 °C, and 1100 °C. The upper left image in each figure shows the TEM image of the NWs. The upper right images show the SAED pattern. The middle right images show the SEM image of micrometer size wires with facets. The lower images are the EDS mappings of chromium (lower left), oxygen (lower middle), and silicon (lower right).
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