Energy levels of SnTe, showing L-point double group basis states in the presence of spin-orbit interaction and energy values. The band ordering is according to Bernick and Kleinman. 38 The basis states are as given in Mitchell and Wallis. 58 In case of PbTe, the band edge levels, and , are interchanged.
Fermi energy of degenerate holes versus carrier concentration for p-type for x = 0.025, 0.04, and 0.06, respectively. The values are almost same for all the concentrations. The consideration of in the abscissa is to show departure from linear behavior, which confirms departure from parabolicity. The Fermi energy is calculated self-consistently from Eq. (4.28) .
Density of states versus square root of the Fermi energy for p-type for x = 0.06. The abscissa so chosen is to show departure from linear variations and hence nonparabolicity. The DOS is calculated from Eq. (4.30) . Reprinted with permission from AIP Conf. Proc. 1461, 64 (2012). Copyright 2012 American Institute of Physics.
Effective mass versus carrier concentration in p-type for x = 0.06. The effective mass shows a linear behavior as a function of carrier density.
(a) Effective g-factor versus carrier concentration in p-type for x = 0.06. At high carrier densities, the g-factor is almost constant and non-linear. (b) Effective g-factor versus carrier concentration in logarithmic scale.
Values of the U for different hole concentrations for x = 0.06. The corresponding Fermi energies and densities of states are also given.
Longitudinal and transverse effective masses and mass anisotropy for some representative hole concentrations for p-type for T = 1.3 K. corresponds to band edge values. The corresponding values for x = 0 are of SnTe. are the Bernick and Kleinman values. 38
Longitudinal and transverse effective g-factors for some typical hole concentrations for p-type , x = 0.06, T = 4.24 K. The band edge values are from Bernick and Kleinman. 38
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