1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Theory of formalism for diluted magnetic semiconductors: Application to p-type
Rent:
Rent this article for
USD
10.1063/1.4793788
/content/aip/journal/jap/113/10/10.1063/1.4793788
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4793788

Figures

Image of FIG. 1.
FIG. 1.

Energy levels of SnTe, showing L-point double group basis states in the presence of spin-orbit interaction and energy values. The band ordering is according to Bernick and Kleinman. 38 The basis states are as given in Mitchell and Wallis. 58 In case of PbTe, the band edge levels, and , are interchanged.

Image of FIG. 2.
FIG. 2.

Fermi energy of degenerate holes versus carrier concentration for p-type for x = 0.025, 0.04, and 0.06, respectively. The values are almost same for all the concentrations. The consideration of in the abscissa is to show departure from linear behavior, which confirms departure from parabolicity. The Fermi energy is calculated self-consistently from Eq. (4.28) .

Image of FIG. 3.
FIG. 3.

Density of states versus square root of the Fermi energy for p-type for x = 0.06. The abscissa so chosen is to show departure from linear variations and hence nonparabolicity. The DOS is calculated from Eq. (4.30) . Reprinted with permission from AIP Conf. Proc. 1461, 64 (2012). Copyright 2012 American Institute of Physics.

Image of FIG. 4.
FIG. 4.

Effective mass versus carrier concentration in p-type for x = 0.06. The effective mass shows a linear behavior as a function of carrier density.

Image of FIG. 5.
FIG. 5.

(a) Effective g-factor versus carrier concentration in p-type for x = 0.06. At high carrier densities, the g-factor is almost constant and non-linear. (b) Effective g-factor versus carrier concentration in logarithmic scale.

Tables

Generic image for table
Table I.

Values of the U for different hole concentrations for x = 0.06. The corresponding Fermi energies and densities of states are also given.

Generic image for table
Table II.

Longitudinal and transverse effective masses and mass anisotropy for some representative hole concentrations for p-type for T = 1.3 K. corresponds to band edge values. The corresponding values for x = 0 are of SnTe. are the Bernick and Kleinman values. 38

Generic image for table
Table III.

Longitudinal and transverse effective g-factors for some typical hole concentrations for p-type , x = 0.06, T = 4.24 K. The band edge values are from Bernick and Kleinman. 38

Loading

Article metrics loading...

/content/aip/journal/jap/113/10/10.1063/1.4793788
2013-03-08
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theory of k→⋅π→+U formalism for diluted magnetic semiconductors: Application to p-type Sn1−xGdxTe
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4793788
10.1063/1.4793788
SEARCH_EXPAND_ITEM