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Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
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10.1063/1.4794168
/content/aip/journal/jap/113/10/10.1063/1.4794168
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4794168
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental setups of the RCPCD and pump-probe (FCA). Both experiments use the 1064 nm YAG laser to excite the sample, where the RCPCD coil and CO2 laser with HgCdTe photodetector measure the respective signals.

Image of FIG. 2.
FIG. 2.

(a) Theoretical transient absorption coefficient, where and (b) theoretical absorption coefficient at t = 0 s with respect to excess carrier concentration.

Image of FIG. 3.
FIG. 3.

Resonant coupled photoconductive decay results for a p-type silicon wafer under low-injection conditions.

Image of FIG. 4.
FIG. 4.

Free-carrier absorption results from the p-type silicon wafer under low-injection conditions.

Image of FIG. 5.
FIG. 5.

Transient mobility based on experimental RCPCD and FCA data.

Image of FIG. 6.
FIG. 6.

Transient mobility at t = 0 s as a function of volume generation.

Image of FIG. 7.
FIG. 7.

Minority-carrier lifetime with respect to injection as measured by RCPCD and FCA. Additionally, the excess carrier concentration lifetime is calculated (green).

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/content/aip/journal/jap/113/10/10.1063/1.4794168
2013-03-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4794168
10.1063/1.4794168
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