Experimental setups of the RCPCD and pump-probe (FCA). Both experiments use the 1064 nm YAG laser to excite the sample, where the RCPCD coil and CO2 laser with HgCdTe photodetector measure the respective signals.
(a) Theoretical transient absorption coefficient, where and (b) theoretical absorption coefficient at t = 0 s with respect to excess carrier concentration.
Resonant coupled photoconductive decay results for a p-type silicon wafer under low-injection conditions.
Free-carrier absorption results from the p-type silicon wafer under low-injection conditions.
Transient mobility based on experimental RCPCD and FCA data.
Transient mobility at t = 0 s as a function of volume generation.
Minority-carrier lifetime with respect to injection as measured by RCPCD and FCA. Additionally, the excess carrier concentration lifetime is calculated (green).
Article metrics loading...
Full text loading...