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Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization
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10.1063/1.4794991
/content/aip/journal/jap/113/10/10.1063/1.4794991
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4794991

Figures

Image of FIG. 1.
FIG. 1.

XRD scans of the (004) peaks of (100) oriented SiGe samples after multi-step oxidations with decreasing temperatures. The 2θ position for the as-grown sample is marked for reference.

Image of FIG. 2.
FIG. 2.

XRD scans of the (004) peaks of (100) oriented SiGe samples after various multi-step oxidation schemes. The 2θ positions of the peaks indicate an increase, no change, and a decrease in . The scan for the as-grown sample is omitted for clarity, but its 2θ position is marked for reference.

Image of FIG. 3.
FIG. 3.

Oxide thickness versus oxidation time at (a) 900, (b) 950, and (c) . The data are for (111), (110), and (100) oriented and Si.

Image of FIG. 4.
FIG. 4.

XRD 2θ-ω scans of the (333) peaks of (111) oriented oxidized at various temperatures and times. Five samples with oxide thicknesses between 20 and 100 nm are shown for each temperature.

Image of FIG. 5.
FIG. 5.

XRD measurements of the Ge content in the pile-up layer, , versus oxidation temperature, T, along with linear fits to the data.

Image of FIG. 6.
FIG. 6.

Correlation between values measured by XRD and those calculated by Eq. (1) . The diagonal line indicates where the measured and calculated values are exactly equal and is drawn for visual guidance only.

Image of FIG. 7.
FIG. 7.

The Ge content in the pile-up layer, , versus oxide thickness, . The lines are for visual guidance only.

Image of FIG. 8.
FIG. 8.

Oxidation rate ratio, , versus the oxide thickness of the (111) oriented sample, .

Image of FIG. 9.
FIG. 9.

The oxidation rate ratio between SiGe and Si samples of two orientations, , versus the oxidation rate ratio between SiGe and Si for the (100) orientation, . The data are labeled according to the oxidation temperature and the sample orientation (hkl) used to calculate P.

Tables

Generic image for table
Table I.

Parameters for diffusivity of Si in SiGe for different orientations.

Generic image for table
Table II.

Oxidation rate ratios, , comparing SiGe to Si. The values are averages for all oxidation times for each combination of temperature and orientation.

Generic image for table
Table III.

Oxidation rate ratios, , and , for the stated orientations. The values are averages for Si or SiGe (as indicated) for the five oxidation times used at each temperature.

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/content/aip/journal/jap/113/10/10.1063/1.4794991
2013-03-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4794991
10.1063/1.4794991
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