XRD scans of the (004) peaks of (100) oriented SiGe samples after multi-step oxidations with decreasing temperatures. The 2θ position for the as-grown sample is marked for reference.
XRD scans of the (004) peaks of (100) oriented SiGe samples after various multi-step oxidation schemes. The 2θ positions of the peaks indicate an increase, no change, and a decrease in . The scan for the as-grown sample is omitted for clarity, but its 2θ position is marked for reference.
Oxide thickness versus oxidation time at (a) 900, (b) 950, and (c) . The data are for (111), (110), and (100) oriented and Si.
XRD 2θ-ω scans of the (333) peaks of (111) oriented oxidized at various temperatures and times. Five samples with oxide thicknesses between 20 and 100 nm are shown for each temperature.
XRD measurements of the Ge content in the pile-up layer, , versus oxidation temperature, T, along with linear fits to the data.
Correlation between values measured by XRD and those calculated by Eq. (1) . The diagonal line indicates where the measured and calculated values are exactly equal and is drawn for visual guidance only.
The Ge content in the pile-up layer, , versus oxide thickness, . The lines are for visual guidance only.
Oxidation rate ratio, , versus the oxide thickness of the (111) oriented sample, .
The oxidation rate ratio between SiGe and Si samples of two orientations, , versus the oxidation rate ratio between SiGe and Si for the (100) orientation, . The data are labeled according to the oxidation temperature and the sample orientation (hkl) used to calculate P.
Parameters for diffusivity of Si in SiGe for different orientations.
Oxidation rate ratios, , comparing SiGe to Si. The values are averages for all oxidation times for each combination of temperature and orientation.
Oxidation rate ratios, , and , for the stated orientations. The values are averages for Si or SiGe (as indicated) for the five oxidation times used at each temperature.
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