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The formation of Ti–O tetrahedra and band gap reduction in SiO2 via pulsed ion implantation
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10.1063/1.4795262
/content/aip/journal/jap/113/10/10.1063/1.4795262
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4795262

Figures

Image of FIG. 1.
FIG. 1.

Ti concentration as a function of depth for the implanted samples. The left axis shows concentration for the cm−2 fluence used in experiment, while the right axis is scaled for the cm−2 fluence. Lines are shown to indicate the projected range (Rp ), the standard deviation of the projected range ( ), and the average and maximum concentrations ( and ).

Image of FIG. 2.
FIG. 2.

Titanium -edge X-ray absorption spectra for implanted and reference samples. The spectra have been offset vertically for clarity.

Image of FIG. 3.
FIG. 3.

Titanium -edge X-ray absorption spectra for implanted and reference samples, along with calculated spectra of Ti4+ in Td and Oh symmetries. The spectra have been offset vertically for clarity. The dotted spectrum is the result of subtracting 50% of the normalized cm−2 spectrum from the normalized cm−2 spectrum.

Image of FIG. 4.
FIG. 4.

Oxygen K-edge X-ray absorption (right) and emission (left) spectra for implanted and reference samples. The XAS spectra have been offset vertically for clarity. For two of the samples, the second derivatives of the spectra are shown below and the common valence band maximum energy a and the conduction band minimum energies (b for SiO2:TiO2, c for SiO2) are marked with vertical dotted lines.

Tables

Generic image for table
Table I.

Parameters used for the multiplet crystal field theory calculations. κ are rescaling factors for the intra-atomic Slater integrals, given as fractions of the Hartree Fock values.

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/content/aip/journal/jap/113/10/10.1063/1.4795262
2013-03-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The formation of Ti–O tetrahedra and band gap reduction in SiO2 via pulsed ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/10/10.1063/1.4795262
10.1063/1.4795262
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