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Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride
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10.1063/1.4795146
/content/aip/journal/jap/113/11/10.1063/1.4795146
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795146

Figures

Image of FIG. 1.
FIG. 1.

The velocity-field characteristics associated with wurtzite and zinc-blende InN. For the sake of comparison, a wurtzite GaN velocity-field characteristic is also depicted. For all cases, the crystal temperature is set to 300 K and the doping concentration is set to . For each velocity-field characteristic, the peak field, i.e., the applied electric field strength at which point the maximum electron drift velocity occurs, is indicated with an arrow. These results are determined from Monte Carlo simulations. The online version is depicted in color.

Image of FIG. 2.
FIG. 2.

(a) The electron energy in the lowest energy conduction band valley as a function of the wave-vector, , for the cases of wurtzite and zinc-blende InN. The electron energy is represented with respect to the valley minimum, i.e., E = 0 eV corresponds to the conduction band minimum. The wave-vector, , represented in one-dimensional form, is taken with respect to the location of the valley minimum. The electron effective mass is set to its nominal wurtzite and zinc-blende InN values, i.e., and , respectively; recall Table II . Eq. (1) forms the basis of this relationship. The online version is depicted in color. (b) The occupancy of the lowest energy conduction band valley, , as a function of the applied electric field strength, for the cases of wurtzite and zinc-blende InN. The total number of electrons considered in each simulation is three-thousand. For all cases, the crystal temperature is set to 300 K and the doping concentration is set to . These results are determined from Monte Carlo simulations. The results depicted in this plot are determined from the same simulations used to determine the results depicted in Figure 1 . The online version is depicted in color.

Image of FIG. 3.
FIG. 3.

(a) The electron drift velocity as a function of the time elapsed since the application of the electric field, for various applied electric field strength selections, for the case of wurtzite InN. For all cases, the crystal temperature is set to 300 K and the doping concentration is set to . These results are determined from Monte Carlo simulations. The online version is depicted in color. (b) The electron drift velocity as a function of the time elapsed since the application of the electric field, for various applied electric field strength selections, for the case of zinc-blende InN. For all cases, the crystal temperature is set to 300 K and the doping concentration is set to . These results are determined from Monte Carlo simulations. The online version is depicted in color.

Image of FIG. 4.
FIG. 4.

The electron drift velocity as a function of the distance displaced amongst the compound semiconductors wurtzite InN, zinc-blende InN, wurtzite GaN, and GaAs. The applied electric field strengths are chosen to correspond to twice the peak field for each material considered, i.e., 60 kV/cm for the case of wurtzite InN, 100 kV/cm for the case of zinc-blende InN, 280 kV/cm for the case of wurtzite GaN, and 8 kV/cm for the case of GaAs. For all cases, the crystal temperature is set to 300 K and the doping concentration is set to . These results are determined from Monte Carlo simulations. The wurtzite and zinc-blende InN results are determined using the same Monte Carlo simulations used to determine Figures 3(a) and 3(b) , respectively. The online version is depicted in color.

Tables

Generic image for table
Table I.

Our material parameter selections corresponding to wurtzite and zinc-blende InN.

Generic image for table
Table II.

Our band structural parameter selections corresponding to wurtzite and zinc-blende InN.

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/content/aip/journal/jap/113/11/10.1063/1.4795146
2013-03-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795146
10.1063/1.4795146
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