1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
B-doping in Ge by excimer laser annealing
Rent:
Rent this article for
USD
10.1063/1.4795268
/content/aip/journal/jap/113/11/10.1063/1.4795268
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795268
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-TEM of a Ge sample implanted with 1 × 1015 B/cm2 at 20 keV, together with the B concentration profile (continuous line) as measured by SIMS, just after the implantation.

Image of FIG. 2.
FIG. 2.

X-TEM view of a low fluence sample (1 × 1015 B/cm2 at 20 keV) subjected to ELA (∼630 mJ/cm2, 10 pulses), together with the B concentration profiles after ELA for 1 (continuous line) or 10 pulses (dotted line). Simulated B profiles are reported too (crosses for 1 pulse, × for 10 pulses).

Image of FIG. 3.
FIG. 3.

(T) function, i.e., the average ratio between low and high diffusivity states at constant temperature (T), obtained with the calibration process of the low fluence case.

Image of FIG. 4.
FIG. 4.

Carrier concentration profiles as measured by SRP (a) and O concentration profiles as measured by SIMS (b) after low B fluence implant plus ELA for 1 pulse (closed circles) or 10 pulses (closed triangles), or after low B fluence implant plus etch of native germanium oxide plus ELA for 1 pulse (open circles) or 10 pulses (open triangles). The O concentration profile in a virgin Ge is reported as reference (grey line).

Image of FIG. 5.
FIG. 5.

Inactive B fluence vs oxygen amount in B-implanted samples plus ELA for 1, 3 or 10 pulses (closed squares). Dashed line is the linear fit of the experimental data.

Image of FIG. 6.
FIG. 6.

X-TEM of a Ge sample implanted with 1 × 1016 B/cm2 at 20 keV, together with the B concentration profile (continuous line) as measured by SIMS, just after the implantation.

Image of FIG. 7.
FIG. 7.

X-TEM view of a high fluence sample (1 × 1016 B/cm2 at 20 keV) subjected to ELA (∼ 630 mJ/cm2, 10 pulses), together with the B concentration profiles after ELA for 1 (continuous line) or 10 pulses (dotted line). Simulated B profiles are reported too (crosses for 1 pulse, × for 10 pulses). The arrow in the TEM image indicates the maximum melt depth.

Image of FIG. 8.
FIG. 8.

(T) function, i.e., the average ratio between low and high diffusivity states at constant temperature (T), obtained with the calibration process of the high fluence case.

Image of FIG. 9.
FIG. 9.

Carrier concentration profiles as measured by SRP after high B fluence implant plus ELA for 1 pulse (closed circles) or 10 pulses (closed triangles). Open circles indicate the carrier concentration profile in a sample subjected to ELA for 1 pulse plus a thermal annealing at 600 °C for 1 h.

Loading

Article metrics loading...

/content/aip/journal/jap/113/11/10.1063/1.4795268
2013-03-19
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: B-doping in Ge by excimer laser annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795268
10.1063/1.4795268
SEARCH_EXPAND_ITEM