(a) The electron drift velocity (solid line and left ordinate), the electron quasitemperature (dashed line and right ordinate); (b) the internal energy (dashed line and right ordinate), the kinetic energy of the drift motion (dotted line and right ordinate and right ordinate), and the ratio (solid line and left ordinate). A near Ohmic regime follows for field intensities smaller than approximately 5 kV/cm.
Phonon quasitemperature per mode in the conditions indicated in the caption of Fig. 2 .
Dependence on wavenumber of the rate of change Γ for several values of (moderate to high) electric field intensity and four values of the carriers’ concentrations.
Phonon quasi-temperature per mode for three values of (moderate to high) electric field intensities, and four carriers’ concentrations. It is evident the condensation in the region around, roughly, cm−1.
Dependence of the phenomenon of condensation on the intensity of the carrier-LA phonon interaction.
For the case of a electric field of 100 kV/cm are shown the “lobes” describing the values of the ac-phonon nonequilibrium temperature, for the three wavenumber indicated, corresponding to all possible values of the angle θ, with q parallel to the electric field for and antiparallel for .
For the case of wavenumber cm−1 are shown the “lobes” describing the values of the ac-phonon nonequilibrium temperature, for the three intensities of the electric field indicated, corresponding to all possible values of the angle θ.
Dependence on the relaxation time of the phonon quasitemperature per mode, in the conditions indicated in the inset.
Values of ve and for weak electric field intensities F and for the four concentrations.
Values of ve and for the four concentrations and three intensities F of the electric field.
Parameters of GaN (WZ).
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