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Drifting electron excitation of acoustic phonons: Cerenkov-like effect in n-GaN
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10.1063/1.4795271
/content/aip/journal/jap/113/11/10.1063/1.4795271
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795271

Figures

Image of FIG. 1.
FIG. 1.

(a) The electron drift velocity (solid line and left ordinate), the electron quasitemperature (dashed line and right ordinate); (b) the internal energy (dashed line and right ordinate), the kinetic energy of the drift motion (dotted line and right ordinate and right ordinate), and the ratio (solid line and left ordinate). A near Ohmic regime follows for field intensities smaller than approximately 5 kV/cm.

Image of FIG. 2.
FIG. 2.

Dependence on wavenumber of the rate of change Γ [cf. Eqs. (2) and (5) ], for different carriers’ velocities (the corresponding electric field intensities and concentrations are given in Table I ). Γ is identically null when the carriers’ velocity becomes equal to the sound velocity.

Image of FIG. 3.
FIG. 3.

Phonon quasitemperature per mode in the conditions indicated in the caption of Fig. 2 .

Image of FIG. 4.
FIG. 4.

Dependence on wavenumber of the rate of change Γ for several values of (moderate to high) electric field intensity and four values of the carriers’ concentrations.

Image of FIG. 5.
FIG. 5.

Phonon quasi-temperature per mode for three values of (moderate to high) electric field intensities, and four carriers’ concentrations. It is evident the condensation in the region around, roughly, cm−1.

Image of FIG. 6.
FIG. 6.

Dependence of the phenomenon of condensation on the intensity of the carrier-LA phonon interaction.

Image of FIG. 7.
FIG. 7.

For the case of a electric field of 100 kV/cm are shown the “lobes” describing the values of the ac-phonon nonequilibrium temperature, for the three wavenumber indicated, corresponding to all possible values of the angle θ, with q parallel to the electric field for and antiparallel for .

Image of FIG. 8.
FIG. 8.

For the case of wavenumber  cm−1 are shown the “lobes” describing the values of the ac-phonon nonequilibrium temperature, for the three intensities of the electric field indicated, corresponding to all possible values of the angle θ.

Image of FIG. 9.
FIG. 9.

Dependence on the relaxation time of the phonon quasitemperature per mode, in the conditions indicated in the inset.

Tables

Generic image for table
Table I.

Values of ve and for weak electric field intensities F and for the four concentrations.

Generic image for table
Table II.

Values of ve and for the four concentrations and three intensities F of the electric field.

Generic image for table
Table III.

Parameters of GaN (WZ).

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/content/aip/journal/jap/113/11/10.1063/1.4795271
2013-03-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Drifting electron excitation of acoustic phonons: Cerenkov-like effect in n-GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795271
10.1063/1.4795271
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