This paper presents a design of electronic synapse with Spike Time Dependent Plasticity (STDP) based on resistivememory device. With the resistivememory device whose resistance can be purposely changed, the weight of the synaptic connection between two neurons can be modified. The synapse can work according to the STDP rule, ensuring that the timing between pre and post-spikes leads to either the long term potentiation or long term depression. By using the synapse, a neural network with three neurons has been constructed to realize the STDP learning.
Received 07 December 2012Accepted 28 February 2013Published online 15 March 2013
This work has been supported by NSFC under Project No. 61274086, the Young Scholar Fund of Sichuan under Project No. 2011JQ0002, and the Fundamental Funds for the Central Universities and NTU Si COE Program.
Article outline: I. INTRODUCTION II. DESIGN CONSIDERATION III. SIMULATION RESULTS IV. CONCLUSIONS