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Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser
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10.1063/1.4795586
/content/aip/journal/jap/113/11/10.1063/1.4795586
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795586
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A high power AlGaAs/GaAs/InGaAs laser structure of the type analysed in the paper, with size notations explained (specific values not necessarily those used in calculations).

Image of FIG. 2.
FIG. 2.

Dependence of the carrier density on the current (density)-distance product plotted in universal dimensionless variables (notations for hole density at the p-side of the structure; graphs for the electron density at the n-side are identical). Parameter: dimensionless background minority carrier density. Solid line: exact solutions; dashed-dotted line: approximation (10) ; dotted line: approximation (11) .

Image of FIG. 3.
FIG. 3.

Hole density at the p-side of the structure as function of the current density-distance product, for several values of the ionised acceptor density NA and for the background minority carrier (electron) density Nb  = 1016 cm−3 (a) and Nb  = 1017 cm−3 (b).

Image of FIG. 4.
FIG. 4.

Voltage drop and the effective resistivity of the material of the p-side of the structure as function of the current density–structure thickness product. Doping levels and background electron densities as in Figure 3 .

Image of FIG. 5.
FIG. 5.

Voltage drop and the effective resistance of the p-side of a unit device area as function of the p-side thickness for two values of current density: 103 A/cm2 (a) and 104 A/cm2 (b). Nb  = 1016 cm−3.

Image of FIG. 6.
FIG. 6.

(a) Hole density at the n-side of the structure as function of the current density-distance product, for several values of the ionised donor density ND and for the background carrier density Nb  = 1016 cm−3; (b) voltage drop and the effective resistivity of the n-side of the structure as function of the current density n-side thickness product for the same parameter values.

Image of FIG. 7.
FIG. 7.

Voltage drop on the p-side of the structure as function of the hole diffusion coefficient for two values of p-doping. Current density j = 103 A/cm2; Nb  = 1016 cm−3.

Image of FIG. 8.
FIG. 8.

Voltage drop and the effective resistance of the p-side of a unit device area as function of the p-side thickness for j = 103 A/cm2 and two values of diffusion coefficient and two values of Nb .

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/content/aip/journal/jap/113/11/10.1063/1.4795586
2013-03-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/11/10.1063/1.4795586
10.1063/1.4795586
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