The pictorial representation of the synthesis procedure and the redness of nano selenium.
(a) X-ray diffraction pattern of the Se nanopowder. (b) The difference plot between observed and calculated profiles as obtained by Rietveld refinement.
(a)TEM image of the Se nanoparticles dispersed in chloroform. (b) Particle size distribution of Se nanoparticles and fitting of the log normal distribution function. (c) HR-TEM image of the selenium nano particle and (d) SAED pattern with assigned planes of Se nanoparticles.
UV-Vis absorption spectra of the Se nanoparticles dispersed in chloroform. Calculation of band gap is shown in the inset of the figure.
Variation of ln σdc with 1000/T. The activation energies are calculated from the slopes of the straight lines drawn at low and high temperature regions.
Different conduction regions (approximate) with probable conduction mechanisms.
Plotting of the (a) variation of ln σac with ln f. (b) Variation of the frequency exponent (S) with temperature where the continuous line is the best fitting of Eq. (4) .
Variation of σac (f) with temperature. (a) at 500 Hz (b) at 1 MHz. The continuous blue lines in the above graphs give us the corresponding best fit of the experimental data.
Variation of (a) real part of dielectric constant with temperature and (b) imaginary part of dielectric constant with temperature.
Variation of the real part of the dielectric constant with frequency at different temperatures.
Variation of the real part of impedance with frequency. The points in the graph represent the experimental data where the solid line represents the theoretical best fit.
Plotting of the current density (J) versus voltage (V) characteristic of the sample. Considering the effect of silver contact the sample can be considered as a back-to-back Schottky diode (Inset). The points are the experimental values where the continuous line is the fitting of Eq. (8) .
Plotting of the room temperature C-V characteristic.
Plotting of 1/C2 versus applied voltage (V). Extrapolation of the straight line portion (shown with red dotted line) on the voltage axis yields the value of = 1.59 eV.
Exhibition of hysteresis behavior of the sample with ±40 V applied voltage.
The values of average crystallite size, average lattice strain, cell parameters, and cell volume as obtained by Rietveld analysis.
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