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Bridging semiconductor and magnetism
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    By H. Ohno1,2,3,a)
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    2 Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    3 WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
    a) Author to whom correspondence should be addressed. Electronic mail: ohno@riec.tohoku.ac.jp. Telephone/Fax: +81-22-217-5553.
    J. Appl. Phys. 113, 136509 (2013); http://dx.doi.org/10.1063/1.4795537
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/content/aip/journal/jap/113/13/10.1063/1.4795537
2013-03-29
2014-10-01

Abstract

Carrier-induced ferromagnetism and its manipulation in Mn-doped III-V semiconductors, such as (In,Mn)As and (Ga,Mn)As, offer a wide variety of phenomena that originate from the interplay between magnetism and semiconducting properties, forming a bridge between semiconductor and magnetism. A review is given on the electrical manipulation of magnetism, its understanding, and potential applications both from the physics point of view and from the technological point of view. The electric-field study on magnetism is now being extended to magnetic metals, leading to an energy efficient way of magnetization reversal important for future semiconductor integrated circuit technology, yet another route to bridge semiconductor and magnetism in a fruitful way.

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Scitation: Bridging semiconductor and magnetism
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4795537
10.1063/1.4795537
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