I-V characteristics of the homojunction composed of undoped n-type ZnO and p-type ZnO:(P, N). The upper left inset shows the schematic structure of the p-n heterojunction. The lower right inset shows the Ohmic contact characteristic of two Ni/Au contacts on the p-type and two In contacts on the n-type ZnO.
SIMS depth profiles of (a) ZnO:(P, N) and (b) ZnO: N films.
XPS spectra of (a) P2 p 1/3 and Zn3s and (b) N1s of the ZnO:(P, N) film.
Variation of (αhν)2 with photon energy (hν) of (a) ZnO:(P, N) and (b) undoped ZnO films.
Room-temperature PL spectra of (a) ZnO:(P, N) and (b) undoped ZnO films.
PL spectra of ZnO:(P, N) film measured at temperatures from 83 to 300 K. The inset shows the 83 K PL spectra of ZnO:(P, N) film.
Electrical properties of ZnO:(P, N), ZnO:P, and ZnO:N films measured by van der Pauw method at room temperature.
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