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Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells
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10.1063/1.4799065
/content/aip/journal/jap/113/13/10.1063/1.4799065
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799065

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image (30° tilt angle) of GaAs/GaSb core/shell NWs (shell growth time of 600 s). (b)–(e) BF TEM images of the top regions of four NWs with four beam orientations.

Image of FIG. 2.
FIG. 2.

HAADF image of a middle section of a GaAs/GaSb core/shell NW (a1) with corresponding EDS scans ((a2) and (a3)) along the lines indicated in (a1). HAADF image of the top region of two GaAs/GaSb core/shell NW (b1) with corresponding EDS scan (b2) along the line shown in (b1).

Image of FIG. 3.
FIG. 3.

(a) BF TEM image of a GaAs/GaSb core/shell NW (b) with corresponding SADP along 〈123〉 zone axis. (c) HRTEM image of the GaAs/GaSb interface. Arrows on both sides of the HRTEM image indicate the GaAs/GaSb interface. The dotted lines indicate the extra planes in the GaAs region terminating at the interface.

Image of FIG. 4.
FIG. 4.

Plot of the relative strain relaxation as a function of NW core diameter. Shell thickness was 9 ± 3 nm for all NWs. The inset shows the NW density vs. core NW diameter along with a Gaussian fit to the data.

Image of FIG. 5.
FIG. 5.

BF TEM image (a) and associated SADP (b). (c) HRTEM image of the GaAs/GaSb interface. The arrows in (c) indicate the approximate location of the GaAs/GaSb interface.

Image of FIG. 6.
FIG. 6.

(a) BF, (b) SADP, and (c) (111) DF TEM images of a GaP/GaSb core/shell NW. HRTEM images of the regions indicated by boxes in (a) and (c) are shown in (d) and (e), respectively.

Image of FIG. 7.
FIG. 7.

Room temperature Raman spectra from an ensemble of GaAs/GaSb core/shell NWs (core diameter of 34 ± 5 nm) with shell growth times of 100 s (shell thickness of ∼1.8 nm) (solid curve) and 600 s (shell thickness of 9 ± 3 nm) (dotted curve). Raman spectra from GaSb substrate (dashed line) and GaAs NWs (dotted-dashed curve) are shown for comparison.

Image of FIG. 8.
FIG. 8.

Lorentzian fits of the Raman spectrum from GaAs/GaSb core/shell NWs with a shell growth time of 100 s (shell thickness of ∼1.8 nm).

Tables

Generic image for table
Table I.

Summary of the Raman peak positions (cm−1) of a GaSb substrate, GaAs NWs, and GaAs/GaSb core/shell NWs with shell growth times of 100 s (shell thickness of ∼1.8 nm) and 600 s (shell thickness of 9 ± 3 nm). The peak position of the GaP NWs and GaP/GaSb core/shell NWs are also summarized for comparison. The peak positions were determined by fitting the data with Lorentzians. Also, the values of p + 2q (1028 s−2) for GaSb (Ref. 31 ), GaAs (Ref. 31 ), and GaP (Ref. 32 ) are summarized.

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/content/aip/journal/jap/113/13/10.1063/1.4799065
2013-04-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799065
10.1063/1.4799065
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