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Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces
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10.1063/1.4799364
/content/aip/journal/jap/113/13/10.1063/1.4799364
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799364
/content/aip/journal/jap/113/13/10.1063/1.4799364
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/content/aip/journal/jap/113/13/10.1063/1.4799364
2013-04-05
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical trends of defects at HfO2:GaAs and Al2O3:GaAs/InAs/InP/GaSb interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799364
10.1063/1.4799364
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