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Study of spontaneous and induced absorption in amorphous Ta2O5 and SiO2 dielectric thin films
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10.1063/1.4799415
/content/aip/journal/jap/113/13/10.1063/1.4799415
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799415
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic drawing of the dual-beam PCI setup. ReU: re-imaging unit, PD: photodetectors, Li: lenses, Mi: mirrors.

Image of FIG. 2.
FIG. 2.

Time records of the absorption signal (at the point of calibration) for samples SiO2 (L), α = 4.3 ppm, (a) and SiO2 (H), α = 190 ppm, (b) at the 458 nm stimulating radiation with intensity P 458 = 15 kW/cm2. The gray lines show the direct experiment, the smooth black lines are drawn to serve as a guide for the eye.

Image of FIG. 3.
FIG. 3.

Induced absorption at 1064 nm in sample Ta2O5 (H) vs. the stimulating radiation (visible and IR) intensities (symbols are shown in the legend).

Image of FIG. 4.
FIG. 4.

266-induced absorption at 1064 nm in sample Ta2O5 (H) vs. the stimulating UV radiation intensity. Full circles show the effect of IIRA during the first exposure by λ 1 = 266 nm stimulating radiation in the range of partial reversibility (intrinsic absorption returns back to its initial value after several hours of 1064 nm exposure), full squares show the effect of IIRA during the second exposure by λ 1 = 266 nm stimulating radiation immediately after the first one; full triangles show the effect in the range of irreversible change of the optical properties. The inset shows the effect in the lower-intensity range.

Image of FIG. 5.
FIG. 5.

Induced absorption at 1064 nm in sample SiO2 (H) vs. the stimulating radiation (visible and IR) intensities (symbols are shown in the legend).

Image of FIG. 6.
FIG. 6.

266-induced absorption at 1064 nm in samples SiO2 (H) (a) and SiO2 (L) (b) vs. the stimulating UV radiation intensity.

Image of FIG. 7.
FIG. 7.

Variation of absorbance vs. wavelength for thin films Ta2O5 (H), Ta2O5 (L), SiO2 (H), and SiO2 (L) measured with Cary 500 spectrophotometer.

Image of FIG. 8.
FIG. 8.

Effect of IIRA at 1064 nm in SiO2 (H) vs. the stimulating radiation photon energy at the intensities 5 kW/cm2. The value of IIRA for SiO2 (L) with 266 nm is shown by a diamond symbol.

Image of FIG. 9.
FIG. 9.

Effect of IIRA at 1064 nm in Ta2O5 (H) vs. the stimulating radiation photon energy at the intensities 2 kW/cm2. The value of IIRA for Ta2O5 (L) with 266 nm is shown by a diamond symbol.

Image of FIG. 10.
FIG. 10.

Relaxation of the absorption signal at 1064 nm radiation exposure toward its initial value for sample SiO2 (H) after the stimulating radiation (458, 488, or 514 nm) is turned off. The gray lines show the direct experimental records, the smooth black lines are theoretical fits. The relaxation times, τ, in seconds are shown in the figure body next to the respective stimulating wavelength λ 1.

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/content/aip/journal/jap/113/13/10.1063/1.4799415
2013-04-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of spontaneous and induced absorption in amorphous Ta2O5 and SiO2 dielectric thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/13/10.1063/1.4799415
10.1063/1.4799415
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