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Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures
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10.1063/1.4799060
/content/aip/journal/jap/113/14/10.1063/1.4799060
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799060
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoreflectance spectra of the i-GaAs (d nm)/n-GaAs structures at room temperature.

Image of FIG. 2.
FIG. 2.

Plots of the extrema of the Franz-Keldysh oscillations in the i-GaAs (d nm)/n-GaAs structures as a function of quasi-index ξ. The solid lines indicate the fitted results with a linear function.

Image of FIG. 3.
FIG. 3.

Time-domain terahertz waveforms in the i-GaAs(d nm)/n-GaAs structures and GaAs bulk crystal as a reference at room temperature. The signal intensity corresponds to a photocurrent through the dipole antenna.

Image of FIG. 4.
FIG. 4.

Fourier power spectra of the terahertz waveforms shown in Fig. 3 .

Image of FIG. 5.
FIG. 5.

Normalized intensity of I LO,FP (open circle) and that of (solid circle) of the coherent LO-phonon band in the Fourier power spectrum as a function of built-in electric field strength in the i-GaAs layer. The dashed line for I LO,FP is a guide for the eyes, while the solid curve for is the fitted result using a quadratic function.

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/content/aip/journal/jap/113/14/10.1063/1.4799060
2013-04-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799060
10.1063/1.4799060
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