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Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
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10.1063/1.4799600
/content/aip/journal/jap/113/14/10.1063/1.4799600
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799600
/content/aip/journal/jap/113/14/10.1063/1.4799600
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/content/aip/journal/jap/113/14/10.1063/1.4799600
2013-04-11
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799600
10.1063/1.4799600
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