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Accurate determination of interface trap state parameters by admittance spectroscopy in the presence of a Schottky barrier contact: Application to ZnO-based solar cells
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10.1063/1.4799633
/content/aip/journal/jap/113/14/10.1063/1.4799633
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799633
/content/aip/journal/jap/113/14/10.1063/1.4799633
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/content/aip/journal/jap/113/14/10.1063/1.4799633
2013-04-09
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accurate determination of interface trap state parameters by admittance spectroscopy in the presence of a Schottky barrier contact: Application to ZnO-based solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4799633
10.1063/1.4799633
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