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Alternative A-gate structures for the realization of semiconductor quantum computers
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10.1063/1.4800621
/content/aip/journal/jap/113/14/10.1063/1.4800621
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4800621
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Figures

Image of FIG. 1.
FIG. 1.

The proposed coplanar A-gate structures for the realization of the semiconductor quantum computer based on the nuclear spin of a phosphorus atom doped inside a silicon substrate, (a) the basic structure, (b) and (c) two possible variants.

Image of FIG. 2.
FIG. 2.

The proposed split-ground A-gate structures, (a) the basic structure, (b) and (c) two possible variants.

Image of FIG. 3.
FIG. 3.

A typical 2D potential distribution of the coplanar A-gate structure shown in Fig. 1(a) .

Image of FIG. 4.
FIG. 4.

The variation of the potential for the coplanar A-gate structure in Fig. 1(a) along a line drawn from A-gate lead down to the silicon substrate with x = 40 nm, y = 0, and z = 0 ∼ −105 nm. A static voltage of 5 V is applied on the A-gate lead. The result is compared with that obtained with Kane's A-gate. The dimensions of the A-gate structure are: b = 600 nm, s = 5 nm, w = 7 nm, LG = LA = 70 nm, and Ls = 10 nm. The dielectric constant εr of Si is 11.46 and that of SiGe is 13.95. For Kane's A-gate structure, the dimensions are substrate thickness = 100 nm, A-gate lead width = 7 nm, insulating layer (Si0.5Ge0.5) thickness = 5 nm.

Image of FIG. 5.
FIG. 5.

The variation of the potential for the split-ground A-gate structure in Fig. 2(a) . (a) The 1D variation along a line drawn from A-gate lead down to the silicon substrate with x = 40 nm, y = 0, and z = 0 ∼ −105 nm and for different A-gate lead widths Wp, and (b) the 2D distribution of the electric field on a vertical cross section cut at x = 40 nm and for the case of Wp = 60 nm. The results are compared with that obtained with Kane's A-gate. The dimensions of the split-ground A-gate structure are: b1 = 100 nm, s = 5 nm, L = 100 nm, w = 7 nm, Lp = 40 nm, WS = 100 nm, WG = 25 nm, and b2 = 150 nm. The dimensions of Kane's A-gate are same as those in Fig. 4 .

Image of FIG. 6.
FIG. 6.

The variations of the NMR frequency with applied A-gate voltage for the three different A-gate structures with a uniform static magnetic field of 2 T along the z direction. The dimensions of the coplanar A-gate structure, the split-ground A-gate structure, and Kane's A-gate structure are same as those in Figs. 4 and 5 . For the coplanar A-gate structure, two donor positions are shown (at z = −35 nm and −55 nm). For the split-ground A-gate structure, results for two A-gate widths are shown (Wp = 7 nm and 40 nm).

Image of FIG. 7.
FIG. 7.

The variations of the NMR frequency with applied voltage for the split-ground A-gate structure with a uniform static magnetic field of 2 T along the z direction, (a) for different substrate heights, b1, above the ground, (c) for different widths, WP, of A-gate lead, and (c) for different substrate widths, Ws. The dimensions of the split-ground A-gate structure are same as those in Fig. 5 except the ones being varied. Donor position is at z = −55 nm.

Image of FIG. 8.
FIG. 8.

The 2D potential profiles for three A-gate structures with two end gates being excited, (a) Kane's A-gate structure and (b) the split-ground A-gate structure. The separation between adjacent phosphorus donors (31P) are D = 100 nm for both cases, and the donors are at a distance of 50 nm from the A-gate leads. The dimensions for the split-ground A-gate structure are: b1 = 100 nm, b2 = 100 nm, W = 7 nm, s = 5 nm, Wp = 40 nm, Ws = 80 nm, WG = 20 nm, and L = 100 nm. The dimensions for Kane's A-gate structure are same as those in Fig. 4 .

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/content/aip/journal/jap/113/14/10.1063/1.4800621
2013-04-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Alternative A-gate structures for the realization of semiconductor quantum computers
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4800621
10.1063/1.4800621
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