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Electrical transport and Raman spectral studies of (110)-oriented PrBa2 (Cu0.8M0.2)3O7 (M = Ga, Al, Zn, Ni) thin films
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10.1063/1.4800829
/content/aip/journal/jap/113/14/10.1063/1.4800829
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4800829

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of (110)-oriented (a) PBCGO, (b) PBCAO, (c) PBCNO, and (d) PBCZO thin films.

Image of FIG. 2.
FIG. 2.

AFM images of (110)-oriented (a) PBCAO, (b) PBCGO, (c) PBCZO, and (d) PBCNO thin films.

Image of FIG. 3.
FIG. 3.

Electrical resistivity of (a) (110)-oriented PBCO and PBCMO (M = Ni and Zn) thin film and (b) (110)-oriented PBCMO (M = Al and Ga) thin films.

Image of FIG. 4.
FIG. 4.

ln ρ vs. T−1/4 for (110)-oriented PBCO, PBCAO, and PBCGO thin films.

Image of FIG. 5.
FIG. 5.

(a) Polarized Raman spectra of (110)-oriented PBCO thin films at 298 K and 80 K with 488 nm laser excitation. (b) Polarized Raman spectra of (110)-oriented 20% Al doped PBCO thin films at 298 K and 80 K with 488 nm laser excitation. (c) Polarized Raman spectra of (110)-oriented 20% Ga doped PBCO thin films at 298 K and 80 K with 488 nm laser excitation. (d) Polarized Raman spectra of (110)-oriented 20% Ni doped PBCO thin film at 298 K. (e) Polarized Raman spectra of (110)-oriented 20% Zn doped PBCO thin film at 298 K.

Image of FIG. 6.
FIG. 6.

(a) Plot of resistivity against Temperature for YBCO/PBCGO/YBCO trilayers. The thickness of YBCO layers are 20 nm, while the thickness of PBCGO layers vary from 1.25 nm up to 20 nm in the trilayers. An arbitrary scale has been used to represent the relative values of resistivities for six trilayers which contain varying thickness of PBCGO layers (1.25 nm, 2.5 nm, 3.75 nm, 5.0 nm, 10 nm, and 20 nm). (b) Plot of resistivity against Temperature for YBCO/PBCAO/YBCO trilayers. The thickness of YBCO layers are 20 nm while the thickness of PBCGO layers vary from 1.25 nm up to 20 nm in the trilayers. An arbitrary scale has been used to represent the relative values of resistivities for six trilayers which contain varying thickness of PBCAO layers (1.25 nm, 2.5 nm, 3.75 nm, 5.0 nm, 10 nm, and 20 nm).

Tables

Generic image for table
Table I.

Electrical resistivity values of (110)-oriented PBCO and PBCMO (M = Ni, Zn, Al, Ga) thin films at 300 K and 77 K.

Generic image for table
Table II.

Various localization parameters of (110)-oriented PBCO, PBCAO, and PBCGO thin films.

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/content/aip/journal/jap/113/14/10.1063/1.4800829
2013-04-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical transport and Raman spectral studies of (110)-oriented PrBa2 (Cu0.8M0.2)3O7 (M = Ga, Al, Zn, Ni) thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4800829
10.1063/1.4800829
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