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Modeling electronic transport mechanisms in metal-manganite memristive interfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Dynamic iPulse-vPulse curve obtained for the 630 mA maximum i Pulse amplitude loop. The arrows and numbers indicate the time evolution of the pulsing protocol. Inset: LPCMO/Ag contact configuration. (b) Open symbols: Remnant resistance measurement obtained for a 630 mA loop. The arrow indicates the time evolution of the pulsing protocol. Solid symbols: Dynamic measurement of RQS (defined as vPulse /iPulse ) registered during the 630 mA loop. Notice that RQS tends to RRem as vPulse tends to 0 (or, more precisely, as iPulse tends to IBias ) both for the HR and LR states. (c) iM values obtained for the 630 mA loop. Inset: Electric model for the LPCMO/Ag interface. (d) Open circles: iX values obtained by computing iX = iPulse iM for every (iPulse , iM ) value pair. Solid line: Curve obtained by fitting iX = α·|vPulse |β to the calculated iX data set. Parameters α and β are polarity dependant, see text.

Image of FIG. 2.
FIG. 2.

Eight different remnant resistance states measured with increasing IBias . Notice that all the remnant resistance states remain almost constant (i.e., the interface presents linear i-v) between 100 μA and 1 mA. As IBias increases, though, the remnant resistance measurements decrease, which implies the i-v relation is no longer linear.

Image of FIG. 3.
FIG. 3.

(a) Solid pentagons: iPulse-vPulse curve measured during a 600 mA maximum iPulse amplitude loop. Open pentagons: Remnant measurement corresponding to the 600 mA loop. Open circles: Calculated iPulse-vPulse values. (b) Solid tilted squares: Arbitrary iPulse sequence plotted against time. Open circles: Calculated iPulse intensities, obtained by using the measured vPulse intensities (c) and the measured remnant resistance RRem (d).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling electronic transport mechanisms in metal-manganite memristive interfaces