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Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
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10.1063/1.4801528
/content/aip/journal/jap/113/14/10.1063/1.4801528
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4801528

Figures

Image of FIG. 1.
FIG. 1.

Cross-section high-resolution TEM image of semipolar GaN/AlN quantum wells (sample C) viewed along the and zone axes.

Image of FIG. 2.
FIG. 2.

Low-temperature (4 K) photoluminescence of semipolar (top) and polar (bottom) GaN/AlN QWs. The dashed line indicates the GaN band gap.

Image of FIG. 3.
FIG. 3.

Photoluminescence energy calculated as a function of QW thickness and strain state for polar and semipolar QWs.

Image of FIG. 4.
FIG. 4.

Intersubband absorption spectra for semipolar (top) and polar (bottom) GaN/AlN QWs with different well thicknesses. The spectrum labeled with a star has been obtained by photoinduced absorption measurement.

Image of FIG. 5.
FIG. 5.

Calculated and measured ISB absorption energy versus well thickness.

Image of FIG. 6.
FIG. 6.

Band diagram of (0001)- and -oriented GaN/AlN (3 nm/3 nm) QWs in a superlattice. Solid lines correspond to simulations assuming the superlattice strained on AlN. The conduction band in the case of the wells being strained on GaN is included as a dashed line.

Image of FIG. 7.
FIG. 7.

(left) ISB absorbance of semipolar sample C and the corresponding Gaussian fit (dotted line). (right) ISB absorbance of polar sample B (full line), Lorentzian fitting curves (dotted lines).

Tables

Generic image for table
Table I.

Structural parameters for the GaN/AlN polar and semipolar samples. L QW and L B are the well and barrier thicknesses, respectively.

Generic image for table
Table II.

ISB peak energy with corresponding broadening for polar and semipolar samples.

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/content/aip/journal/jap/113/14/10.1063/1.4801528
2013-04-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/14/10.1063/1.4801528
10.1063/1.4801528
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