Device-grade TlBr was subjected to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl2, Br:MeOH, and HF solutions. High-resolution photoemission measurements on the valence bandelectronic structure and Tl 4f, Br 3d, Cl 2p, and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence bandelectronic structure were correlated with the goal of optimizing the long-term stability and radiation response.
Received 22 February 2013Accepted 28 March 2013Published online 12 April 2013
This work has been supported by the U.S. Department of Homeland Security, Domestic Nuclear Detection Office, under competitively awarded IAA HSHQDC-12-X-00342. This support does not constitute an express or implied endorsement on the part of the Government. This work was performed under the auspices of the U.S. DOE by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344. Portions of this research were carried out at the Stanford Synchrotron Radiation Lightsource, a Directorate of SLAC National Accelerator Laboratory, and an Office of Science User Facility operated for the U.S. Department of Energy Office of Science by Stanford University.
Article outline: I. INTRODUCTION II. EXPERIMENTAL III. RESULTS AND DISCUSSION IV. CONCLUSIONS
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