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Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations
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10.1063/1.4800538
/content/aip/journal/jap/113/15/10.1063/1.4800538
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4800538

Figures

Image of FIG. 1.
FIG. 1.

High resolution X-ray scattering intensity around 004 Bragg peak. The interference structure on the left-hand side of the peak allows the determination of the strain profile (H+ implant dose 3 × 1016 cm−2).

Image of FIG. 2.
FIG. 2.

Variation of the maximum strain as a function of the implanted doseshowing the three different regimes. Solid line: low dose regime, slope = 2.6 × 10−19 cm2/H+. Dotted line: medium dose regime, slope = 6× 10−19 cm2/H+.

Tables

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Table I.

Calculated expansion volumes (per specie) for different low-energy species including one or two hydrogen atoms. Calculations are performed on a 216-atom box (V = 4410 Å3) assuming constant pressure boundary conditions. BC = bond center, AB = anti-bonding, T = tetrahedral, and Hex = hexagonal refer to different sites for atom or molecule locations in the Si structure. The species in bold are those consistent with the low-dose slope, in italic those consistent with the medium dose slope.

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/content/aip/journal/jap/113/15/10.1063/1.4800538
2013-04-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations
http://aip.metastore.ingenta.com/content/aip/journal/jap/113/15/10.1063/1.4800538
10.1063/1.4800538
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